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STTH4R02BY-TR PDF预览

STTH4R02BY-TR

更新时间: 2024-11-16 13:14:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管快恢复二极管超快恢复二极管快速恢复二极管
页数 文件大小 规格书
13页 144K
描述
Automotive 600 V, 3 A Turbo 2 Ultrafast Diode

STTH4R02BY-TR 技术参数

生命周期:Active包装说明:DPAK-3/2
Reach Compliance Code:compliantFactory Lead Time:15 weeks
风险等级:1.49Base Number Matches:1

STTH4R02BY-TR 数据手册

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STTH4R02  
Ultrafast recovery diode  
Main product characteristics  
A
K
IF(AV)  
VRRM  
4 A  
K
200 V  
175° C  
0.76 V  
16 ns  
Tj (max)  
VF (typ)  
trr (typ)  
A
A
K
K
TO-220AC  
STTH4R02D  
TO-220FPAC  
STTH4R02FP  
Features and benefits  
K
Very low conduction losses  
Negligible switching losses  
A
A
Low forward and reverse recovery times  
High junction temperature  
K
NC  
DPAK  
STTH4R02B  
SMB  
STTH4R02U  
Description  
The STTH4R02 uses ST's new 200 V planar Pt  
doping technology, and it is specially suited for  
switching mode base drive and transistor circuits.  
A
A
K
Packaged in TO-220AC, TO-220FPAC, DPAK,  
SMB, SMC, and DO-201AB, this device is  
intended for use in low voltage, high frequency  
inverters, free wheeling and polarity protection.  
K
DO-201AB  
STTH4R02  
SMC  
STTH4R02S  
Order codes  
Part Number  
Marking  
STTH4R02D  
STTH4R02FP  
STTH4R02B  
STTH4R02B-TR  
STTH4R02U  
STTH4R02  
STTH4R02  
STTH4R02  
STTH4R02  
STTH4R02  
4R2U  
STTH4R02  
STTH4R02  
4R2S  
STTH4R02RL  
STTH4R02S  
October 2006  
Rev 2  
1/13  
www.st.com  
13  

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