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STTH506TTI

更新时间: 2024-09-30 21:56:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管局域网超快速恢复二极管
页数 文件大小 规格书
5页 62K
描述
Tandem 600V HYPERFAST RECTIFIER

STTH506TTI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.16Is Samacsys:N
应用:HYPER FAST RECOVERY外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.6 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:60 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245最大功率耗散:17 W
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTH506TTI 数据手册

 浏览型号STTH506TTI的Datasheet PDF文件第2页浏览型号STTH506TTI的Datasheet PDF文件第3页浏览型号STTH506TTI的Datasheet PDF文件第4页浏览型号STTH506TTI的Datasheet PDF文件第5页 
®
STTH506TTI  
Tandem 600V HYPERFAST RECTIFIER  
MAJOR PRODUCTS CHARACTERISTICS  
1
2
3
IF(AV)  
VRRM  
5 A  
600 V (in series)  
150 °C  
Tj (max)  
VF (max)  
2.6 V  
IRM (typ.)  
3.6 A  
3
2
1
FEATURES AND BENEFITS  
Insulated TO-220AB  
ESPECIALLY SUITED AS BOOST DIODE IN  
CONTINUOUS MODE POWER FACTOR  
CORRECTORS AND HARD SWITCHING  
CONDITIONS  
DESCRIPTION  
DESIGNED FOR HIGH dIF/dt OPERATION.  
HYPERFAST RECOVERY CURRENT TO  
COMPETE WITH SiC DEVICES. ALLOWS  
DOWNSIZING OF MOSFET AND HEATSINKS  
INTERNAL CERAMIC INSULATED DEVICES  
WITH EQUAL THERMAL CONDITIONS FOR  
BOTH 300V DIODES  
The TURBOSWITCH “H” is an ultra high  
performance diode composed of two 300V dice in  
series. TURBOSWITCH “H” family drastically cuts  
losses in the associated MOSFET when run at  
high dIF/dt.  
INSULATION  
(2500VRMS  
)
ALLOWS  
PLACEMENT ON SAME HEATSINK AS  
MOSFET FLEXIBLE HEATSINKING ON  
COMMON OR SEPARATE HEATSINK.  
MATCHED DIODES FOR TYPICAL PFC  
APPLICATION  
WITHOUT  
NEED  
FOR  
VOLTAGE BALANCE NETWORK  
Package Capacitance: C=7pF  
ABSOLUTE RATINGS (limiting values, for both diodes)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
600  
V
IF(RMS)  
IFSM  
Tstg  
14  
60  
A
A
RMS forward current  
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms sinusoidal  
-65 +150  
+ 150  
°C  
°C  
Tj  
Maximum operating junction temperature  
TM: TURBOSWITCH is a trademark of STMicroelectronics  
June 2003 - Ed: 1A  
1/5  

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