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STTH506D PDF预览

STTH506D

更新时间: 2024-02-10 08:04:02
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压局域网超快恢复二极管高压超快恢复二极管快速恢复二极管
页数 文件大小 规格书
9页 129K
描述
Turbo 2 ultrafast - high voltage rectifier

STTH506D 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.16Is Samacsys:N
应用:HYPER FAST RECOVERY外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.6 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:60 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245最大功率耗散:17 W
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTH506D 数据手册

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STTH506  
Turbo 2 ultrafast - high voltage rectifier  
Main product characteristics  
A
K
K
IF(AV)  
VRRM  
Tj  
5 A  
600 V  
175° C  
1.1 V  
30 ns  
A
NC  
DPAK  
STTH506B  
VF (typ)  
trr (max)  
Features and benefits  
A
A
Ultrafast switching  
K
K
Low reverse current  
Low thermal resistance  
TO-220AC  
STTH506D  
TO-220FPAC  
STTH506FP  
Reduces conduction and switching losses  
Order codes  
Insulated package TO-220FPAC  
– Insulated voltage: 2500 VRMS  
Typical package capacitance: 12 pF  
Part Number  
Marking  
STTH506B  
STTH506B  
STTH506B  
STTH506D  
STTH506FP  
STTH506B-TR  
STTH506D  
Description  
The STTH506 uses ST Turbo2 600V technology.  
This device is specially suited for use in switching  
power supplies, and industrial applications.  
STTH506FP  
Table 1.  
Symbol  
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)  
Parameter  
Value  
Unit  
VRRM  
Repetitive peak reverse voltage  
600  
V
A
TO-220AC, TO220FPAC  
DPAK  
20  
IF(RMS) RMS forward current  
10  
A
Tc = 145° C  
TO-220AC, DPAK  
TO-220FPAC  
5
A
IF(AV)  
Average forward current, δ = 0.5  
Tc = 120° C  
5
A
TO-220AC, TO220FPAC  
DPAK  
70  
55  
A
tp = 10 ms  
Sinusoidal  
IFSM  
Tstg  
Surge non repetitive forward current  
Storage temperature range  
A
-65 to + 175  
175  
°C  
°C  
Tj  
Maximum operating junction temperature(1)  
dP  
1.  
thermal runaway condition for a diode on its own heatsink  
tot  
1
--------------- < -------------------------  
dT  
R
j
th(j a)  
May 2006  
Rev 1  
1/9  
www.st.com  

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