Datasheet > STT818B_07

STT818B_07

更新时间： 2024-09-21 03:26:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	147K
描述
High gain low voltage PNP power transistor

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STT818B_07 数据手册

STT818B

High gain low voltage PNP power transistor

Features

■ Very low collector to emitter saturation voltage

■ DC current gain > 100 (h

)

■ 3 A continuous collector current (I )

Applications

■ Power management in portable equipments

SOT23-6L

■ Switching regulator in battery charger

applications

Description

The device is manufactured in low voltage PNP

Planar Technology with "Base Island" layout. The

resulting Transistor shows exceptional high gain

performance coupled with very low saturation

voltage.

Figure 1.

Internal schematic diagram

Table 1.

Order code

STT818B

Device summary

Marking

Package

SOT23-6L

Packaging

818B

Tape & reel

August 2007

Rev 5

1/10

www.st.com

12 3 4 5 6 7...10

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