Datasheet > STT8205S

STT8205S

更新时间： 2024-02-09 06:28:50

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	538K
描述
N-Channel Enhancement Mode Power Mos.FET

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STT8205S 数据手册

STT8205S

6 A, 20V,RDS(ON) 28m

Elektronische Bauelemente

N-Channel Enhancement Mode PowerMos.FET

RoHS Compliant Product

Description

The STT8205S provide the designer with best combination of fast

switching, low on-resistance and cost-effectiveness.

The TSSOP-6 package is universally used for all commercial-

industrial surface mount applications.

Features

* Low Drive Current

* Low On-Resistance

* Capable of 2.5V Gate Drive

Millimeter

Min. Max.

1.10 MAX.

Millimeter

Min. Max.

0.45 REF.

0.60 REF.

REF.

ꢀ

8 2 0 5 S

0.70

0.10

1.00

Date Code

0°

0.30

10°

0.50

0.12 REF.

2.70

2.60

1.40

3.10

3.00

1.80

0.95 REF.

1.90 REF.

Absolute Maximum Ratings

Parameter

Symbol

VDS

Ratings

Unit

±8

Drain-Source Voltage

VGS

Gate-Source Voltage

^oC

Continuous Drain Current³,VGS@4.5V

Pulsed Drain Current¹

ID@TA=25

ID@TA=70^oC

IDM

4.8

PD@TA=25

^oC

Total Power Dissipation

1.14

0.01

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³(Max)

Rthj-a

110

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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