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STPS4030CT PDF预览

STPS4030CT

更新时间: 2024-11-14 22:53:19
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 102K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS4030CT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.77其他特性:FREE WHEELING DIODE
应用:EFFICIENCY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:220 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS4030CT 数据手册

 浏览型号STPS4030CT的Datasheet PDF文件第2页浏览型号STPS4030CT的Datasheet PDF文件第3页浏览型号STPS4030CT的Datasheet PDF文件第4页浏览型号STPS4030CT的Datasheet PDF文件第5页浏览型号STPS4030CT的Datasheet PDF文件第6页 
®
STPS4030CT/CG/CR  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAJOR PRODUCTS CHARACTERISTICS  
A1  
A2  
K
IF(AV)  
VRRM  
2 x 20 A  
30 V  
K
Tj (max)  
VF (max)  
150°C  
0.40 V  
FEATURES AND BENEFITS  
A2  
A2  
K
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD VOLTAGE DROP FOR  
HIGHER EFFICIENCY  
A1  
A1  
TO-220AB  
D2PAK  
STPS4030CT  
STPS4030CG  
LOW THERMAL RESISTANCE  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
A2  
K
Dual Schottky rectifier suited for switch Mode  
Power Supply and high frequency DC to DC  
converters.  
Packaged in TO-220AB, D2PAK and I2PAK, this  
device is intended for use in low voltage high  
frequency inverters, free wheeling and polarity  
protection applications.  
A1  
I2PAK  
STPS4030CR  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
30  
Unit  
V
IF(RMS)  
IF(AV)  
32  
A
RMS forward current  
20  
40  
A
Average forward  
current  
Tc = 130°C Per diode  
δ = 0.5  
Per device  
IFSM  
IRRM  
PARM  
Tstg  
220  
2
A
A
Surge non repetitive forward current  
Peak repetitive reverse current  
tp = 10 ms Sinusoidal  
tp=2 µs square F=1kHz  
tp = 1µs Tj = 25°C  
5300  
W
Repetitive peak avalanche power  
Storage temperature range  
- 65 to + 150  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
dV/dt  
10000  
Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 2A  
1/6  

STPS4030CT 替代型号

型号 品牌 替代类型 描述 数据表
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