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STPS40120CT PDF预览

STPS40120CT

更新时间: 2024-11-16 04:30:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管局域网
页数 文件大小 规格书
8页 106K
描述
Power Schottky rectifier

STPS40120CT 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AB包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.45
Is Samacsys:N应用:POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.61 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:120 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS40120CT 数据手册

 浏览型号STPS40120CT的Datasheet PDF文件第2页浏览型号STPS40120CT的Datasheet PDF文件第3页浏览型号STPS40120CT的Datasheet PDF文件第4页浏览型号STPS40120CT的Datasheet PDF文件第5页浏览型号STPS40120CT的Datasheet PDF文件第6页浏览型号STPS40120CT的Datasheet PDF文件第7页 
STPS40120C  
Power Schottky rectifier  
Main product characteristics  
A1  
IF(AV)  
VRRM  
Tj(max)  
VF(typ)  
2 x 20 A  
120 V  
K
A2  
175° C  
0.57 V  
K
K
Feature and benefits  
A2  
A2  
K
K
High junction temperature capability  
Avalanche rated  
A1  
A1  
2
TO-220AB  
I PAK  
STPS40120CR  
Low leakage current  
STPS40120CT  
Good trade-off between leakage current and  
forward voltage drop  
Description  
Dual center tap Schottky rectifier suited for high  
frequency Switch Mode Power Supply.  
Order code  
2
Packaged in TO-220AB and I PAK, this device is  
Part Number  
Marking  
intended to be used in notebook and LCD  
adaptors, desktop SMPS, providing in these  
applications a margin between the remaining  
voltages applied on the diode and the voltage  
capability of the diode.  
STPS40120CT  
STPS40120CR  
STPS40120CT  
STPS40120CR  
Table 1.  
Symbol  
Absolute ratings (limiting values, per diode)  
Parameter  
Value  
Unit  
VRRM  
Repetitive peak reverse voltage  
RMS forward voltage  
120  
30  
V
A
IF(RMS)  
δ = 0.5  
Tc = 145° C  
Per diode  
Per device  
20  
40  
IF(AV)  
Average forward current  
A
IFSM  
PARM  
Tstg  
Surge non repetitive forward current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms Sinusoidal  
200  
10500  
A
tp = 1 μs Tj = 25° C  
W
-65 to + 175  
175  
° C  
° C  
Tj  
Maximum operating junction temperature(1)  
dPtot  
dTj  
1
---------------  
-------------------------  
1.  
<
condition to avoid runaway for a diode on its own heatsink  
Rth(j a)  
December 2006  
Rev 2  
1/8  
www.st.com  
8

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