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STPS40150CT PDF预览

STPS40150CT

更新时间: 2024-11-14 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压PC局域网高电压电源
页数 文件大小 规格书
6页 186K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS40150CT 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AB包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.65
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180441Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220Samacsys Released Date:2015-07-22 14:47:04
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:HIGH VOLTAGE POWER配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:250 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:150 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS40150CT 数据手册

 浏览型号STPS40150CT的Datasheet PDF文件第2页浏览型号STPS40150CT的Datasheet PDF文件第3页浏览型号STPS40150CT的Datasheet PDF文件第4页浏览型号STPS40150CT的Datasheet PDF文件第5页浏览型号STPS40150CT的Datasheet PDF文件第6页 
®
STPS40150CG/CT/CW  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAJOR PRODUCTS CHARACTERISTICS  
A1  
A2  
K
IF(AV)  
VRRM  
2 x 20 A  
150 V  
Tj (max)  
VF (max)  
175°C  
0.75 V  
FEATURES AND BENEFITS  
A2  
A2  
K
HIGH JUNCTION TEMPERATURE CAPABILITY  
LOW LEAKAGE CURRENT  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
K
A1  
A1  
TO-247  
TO-220AB  
STPS40150CT  
STPS40150CW  
K
LOW THERMAL RESISTANCE  
HIGH FREQUENCY OPERATION  
A2  
DESCRIPTION  
A1  
D2PAK  
STPS40150CG  
Dual center tap Schottky rectifiers suited for high  
frequency switch mode power supply.  
Packaged in TO-247, TO-220AB and D2PAK, this  
devices is intended for use to enhance the  
reliability of the application.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
150  
60  
IF(RMS)  
IF(AV)  
A
RMS forward current  
20  
40  
A
Average forward current  
Tc = 150°C Per diode  
δ = 0.5 Per device  
IFSM  
PARM  
Tstg  
250  
14100  
A
W
Surge non repetitive forward current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp = 1µs Tj = 25°C  
- 65 to + 175  
175  
°C  
Tj  
°C  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
V/µs  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
October 2003 - Ed: 1A  
1/6  

STPS40150CT 替代型号

型号 品牌 替代类型 描述 数据表
20CTQ150PBF VISHAY

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