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STPS2045CM PDF预览

STPS2045CM

更新时间: 2024-11-18 13:00:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
7页 86K
描述
RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,45V V(RRM),SO

STPS2045CM 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 V最大非重复峰值正向电流:180 A
最高工作温度:150 °C最大输出电流:10 A
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

STPS2045CM 数据手册

 浏览型号STPS2045CM的Datasheet PDF文件第2页浏览型号STPS2045CM的Datasheet PDF文件第3页浏览型号STPS2045CM的Datasheet PDF文件第4页浏览型号STPS2045CM的Datasheet PDF文件第5页浏览型号STPS2045CM的Datasheet PDF文件第6页浏览型号STPS2045CM的Datasheet PDF文件第7页 
STPS2045CT/CF/CG  
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 10 A  
45 V  
A1  
K
A2  
Tj (max)  
VF (max)  
175 °C  
0.57 V  
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLESWITCHING LOSSES  
EXTREMELYFAST SWITCHING  
A2  
A2  
K
K
A1  
A1  
INSULATEDPACKAGE:ISOWATT220AB  
Insulatingvoltage = 2000V DC  
Capacitance= 12pF  
TO-220AB  
STPS2045CT  
ISOWATT220AB  
STPS2045CF  
K
DESCRIPTION  
Dualcenter tap Schottkyrectifiersuited for Switch-  
Mode Power Supplyand high frequencyDC to DC  
converters.  
A2  
Packaged either in TO-220AB, ISOWATT220AB  
or D2PAK, this device is especially intended for  
use in low voltage, high frequency inverters, free  
wheeling and polarityprotection applications.  
A1  
D2PAK  
STPS2045CG  
ABSOLUTE RATINGS (limitingvalues, per diode)  
Symbol  
Parameter  
Value  
45  
Unit  
V
VRRM  
Repetitivepeak reverse voltage  
IF(RMS) RMSforward current  
30  
A
IF(AV)  
Averageforwardcurrent  
TO-220AB  
D2PAK  
Tc = 155°C Per diode  
10  
A
δ
= 0.5  
ISOWATT220AB Tc = 125°C Per device  
20  
180  
1
IFSM  
IRRM  
Surge non repetitive forward current  
Repetitivepeak reverse current  
tp = 10 ms sinusoidal  
A
A
tp = 2 µs square  
F = 1kHz  
IRSM  
Tstg  
Tj  
Non repetitive peak reverse current  
Storage temperaturerange  
2
A
tp = 100 ms square  
-65 to +175 °C  
Maximum operatingjunction temperature*  
Critical rateof rise of reverse voltage  
175  
°C  
dV/dt  
10000  
V/µs  
dPtot  
dTj  
1
* :  
<
thermal runawayconditionfor a diode on its own heatsink  
Rth(ja)  
June 1999 - Ed: 3B  
1/7  

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