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STPS2030

更新时间： 2024-11-18 04:30:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
6页	104K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS2030 数据手册

STPS2030CT/CG/CR

LOW DROP POWER SCHOTTKY RECTIFIER

MAJOR PRODUCTS CHARACTERISTICS

I_F(AV)

V_RRM

2 x 10 A

30 V

Tj (max)

V_F(max)

150°C

0.40 V

FEATURES AND BENEFITS

■

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

EXTREMELY FAST SWITCHING

LOW FORWARD VOLTAGE DROP FOR

HIGHER EFFICIENCY

TO-220AB

D²PAK

STPS2030CT

STPS2030CG

■

LOW THERMAL RESISTANCE

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual Schottky rectifier suited for switch Mode

Power Supply and high frequency DC to DC

converters.

Packaged in TO-220AB, D²PAK and I²PAK, this

device is intended for use in low voltage high

frequency inverters, free wheeling and polarity

protection applications.

I²PAK

STPS2030CR

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Repetitive peak reverse voltage

Value

Unit

I_F(RMS)

I_F(AV)

RMS forward current

Average forward

current

Tc = 140°C Per diode

δ = 0.5

Per device

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

180

Surge non repetitive forward current

Peak repetitive reverse current

tp = 10 ms Sinusoidal

tp=2 µs square F=1kHz

tp = 100 µs square

tp = 1µs Tj = 25°C

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

3000

- 65 to + 150

150

°C

V/µs

Maximum operating junction temperature *

dV/dt

10000

Critical rate of rise of reverse voltage (rated V_R, Tj = 25°C)

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 3A

1/6

12 3 4 5 6

中文翻译

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