STPS10H100

更新时间： 2024-11-25 22:07:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压高电压电源
页数	文件大小	规格书
7页	112K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS10H100 数据手册

STPS10H100CT/CG/CR/CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 5 A

100 V

175°C

0.61 V

V_F(max)

FEATURES AND BENEFITS

■

HIGH JUNCTION TEMPERATURE CAPABILITY

I²PAK

STPS10H100CR

FOR CONVERTERS LOCATED IN CONFINED

ENVIRONMENT

D²PAK

STPS10H100CG

■

LOW LEAKAGE CURRENT AT HIGH

TEMPERATURE

LOW STATIC AND DYNAMIC LOSSES AS A

RESULT OF THE SCHOTTKY BARRIER

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Schottky barrier rectifier designed for high

frequency miniature Switched Mode Power

Supplies such as adaptators and on board

DC/DC converters. Packaged in TO-220AB,

TO-220FPAB, D²PAK and I²PAK.

TO-220FPAB

STPS10H100CFP

TO-220AB

STPS10H100CT

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

100

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

Average forward

current δ = 0.5

TO-220AB

Tc = 165°C

Tc = 160°C

per diode

per device

D²PAK / I²PAK

TO-220FPAB

I_FSM

I_RRM

Surge non repetitive forward current

Repetitive peak reverse current

tp = 10 ms sinusoidal

tp = 2 µs square F = 1kHz

tp = 1µs Tj = 25°C

180

P_ARMRepetitive peak avalanche power

7200

T_stg

Storage temperature range

- 65 to + 175

175

°C

V/µs

Maximum operating junction temperature *

dV/dt Critical rate of rise of reverse voltage

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j − a)

July 2003 - Ed: 3F

1/7

12 3 4 5 6 7

中文翻译

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