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STPS10H100CG PDF预览

STPS10H100CG

更新时间: 2024-11-25 22:50:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压高电压电源
页数 文件大小 规格书
7页 112K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS10H100CG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:PLASTIC, D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.63
其他特性:LOW LEAKAGE CURRENT应用:HIGH VOLTAGE POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:180 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

STPS10H100CG 数据手册

 浏览型号STPS10H100CG的Datasheet PDF文件第2页浏览型号STPS10H100CG的Datasheet PDF文件第3页浏览型号STPS10H100CG的Datasheet PDF文件第4页浏览型号STPS10H100CG的Datasheet PDF文件第5页浏览型号STPS10H100CG的Datasheet PDF文件第6页浏览型号STPS10H100CG的Datasheet PDF文件第7页 
STPS10H100CT/CG/CR/CFP  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
K
IF(AV)  
VRRM  
2 x 5 A  
100 V  
K
Tj  
175°C  
0.61 V  
VF (max)  
K
FEATURES AND BENEFITS  
A2  
A2  
HIGH JUNCTION TEMPERATURE CAPABILITY  
K
A1  
A1  
I2PAK  
STPS10H100CR  
FOR CONVERTERS LOCATED IN CONFINED  
ENVIRONMENT  
D2PAK  
STPS10H100CG  
LOW LEAKAGE CURRENT AT HIGH  
TEMPERATURE  
LOW STATIC AND DYNAMIC LOSSES AS A  
RESULT OF THE SCHOTTKY BARRIER  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
A2  
A2  
K
A1  
K
Schottky barrier rectifier designed for high  
frequency miniature Switched Mode Power  
Supplies such as adaptators and on board  
DC/DC converters. Packaged in TO-220AB,  
TO-220FPAB, D2PAK and I2PAK.  
A1  
TO-220FPAB  
STPS10H100CFP  
TO-220AB  
STPS10H100CT  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Value  
100  
10  
Unit  
VRRM Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
V
A
A
IF(AV)  
Average forward  
current δ = 0.5  
TO-220AB  
Tc = 165°C  
Tc = 160°C  
per diode  
per device  
5
10  
D2PAK / I2PAK  
TO-220FPAB  
IFSM  
IRRM  
Surge non repetitive forward current  
Repetitive peak reverse current  
tp = 10 ms sinusoidal  
tp = 2 µs square F = 1kHz  
tp = 1µs Tj = 25°C  
180  
1
A
A
PARM Repetitive peak avalanche power  
7200  
W
Tstg  
Tj  
Storage temperature range  
- 65 to + 175  
175  
°C  
°C  
V/µs  
Maximum operating junction temperature *  
dV/dt Critical rate of rise of reverse voltage  
10000  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(j a)  
July 2003 - Ed: 3F  
1/7  

STPS10H100CG 替代型号

型号 品牌 替代类型 描述 数据表
STPS10H100CG-TR STMICROELECTRONICS

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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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