STPS10L45CF

更新时间： 2024-11-25 22:53:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
7页	136K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS10L45CF 数据手册

STPS10L45CT/CG/CF/CFP

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

I_F(AV)

V_RRM

2x5 A

45 V

Tj (max)

V_F(max)

150°C

0.46 V

FEATURES AND BENEFITS

■

LOW FORWARD VOLTAGE DROP MEANING

VERY SMALL CONDUCTION LOSSES

LOW SWITCHING LOSSES ALLOWING HIGH

FREQUENCY OPERATION

D²PAK

INSULATED

TO-220FPAB

PACKAGE:

ISOWATT220AB,

TO-220FPAB

STPS10L45CFP

STPS10L45CG

Insulating voltage = 2000V DC

Capacitance = 12pF

■

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifiers suited for

Switched Mode Power Supplies and high

frequency DC to DC converters.

Packaged in TO-220AB, ISOWATT220AB,

TO-220FPAB and D²PAK, these devices are

intended for use in low voltage, high frequency

inverters, free-wheeling and polarity protection

applications.

ISOWATT220AB

STPS10L45CF

TO-220AB

STPS10L45CT

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Repetitive peak reverse voltage

Value

Unit

I_F(RMS)

I_F(AV)

RMS forward current

Average

forward current

TO-220AB

D²PAK

Tc =135°C Per diode

δ = 0.5 Per device

ISOWATT220AB Tc =115°C Per diode

TO-220FPAB δ = 0.5 Per device

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

150

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms Sinusoidal

tp = 2 µs square F=1kHz

tp = 100 µs square

tp = 1µs Tj = 25°C

2700

- 65 to + 150

150

°C

V/µs

Maximum operating junction temperature *

dV/dt

dPtot

10000

Critical rate of rise of reverse voltage

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 3B

1/7

12 3 4 5 6 7

中文翻译

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