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STPS10L40CT PDF预览

STPS10L40CT

更新时间: 2024-11-25 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 85K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS10L40CT 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.27
其他特性:FREE WHEELING DIODE应用:POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.46 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
最大反向电流:50000 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS10L40CT 数据手册

 浏览型号STPS10L40CT的Datasheet PDF文件第2页浏览型号STPS10L40CT的Datasheet PDF文件第3页浏览型号STPS10L40CT的Datasheet PDF文件第4页浏览型号STPS10L40CT的Datasheet PDF文件第5页浏览型号STPS10L40CT的Datasheet PDF文件第6页 
STPS10L40CT/CG/CF  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCTS CHARACTERISTICS  
A1  
A2  
K
IF(AV)  
VRRM  
2x5 A  
40 V  
K
Tj (max)  
VF (max)  
150°C  
0.46 V  
A2  
FEATURES AND BENEFITS  
A1  
LOW FORWARD VOLTAGE DROP MEANING  
VERY SMALL CONDUCTION LOSSES  
LOW DYNAMIC LOSSES AS A RESULT OF  
THE SCHOTTKY BARRIER  
D2PAK  
STPS10L40CG  
AVALANCHERATED  
DESCRIPTION  
A2  
Dual center tap Schottky rectifiers suited for  
Switched Mode Power Supplies and high  
frequencyDC to DC converters.  
A2  
K
K
A1  
A1  
ISOWATT220AB  
STPS10L40CF  
TO-220AB  
STPS10L40CT  
Packaged in TO-220AB, ISOWATT220AB and  
D2PAK, these devices are intended for use in low  
voltage, high frequency inverters, free-wheeling  
and polarityprotectionapplications.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitivepeak reverse voltage  
Value  
Unit  
VRRM  
40  
V
A
A
IF(RMS)  
IF(AV)  
20  
RMS forward current  
5
Average forward current  
Tc = 135°C Per diode  
10  
δ = 0.5  
Per device  
IFSM  
IRRM  
IRSM  
Tstg  
150  
A
A
Surge non repetitiveforward current  
Repetitivepeak reverse current  
Non repetitive peak reverse current  
Storage temperaturerange  
tp = 10 ms Sinusoidal  
tp=2 µs squareF=1kHz  
tp = 100 µs square  
1
2
A
- 65 to + 150  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
dPtot  
dTj  
1
* :  
<
thermal runawaycondition for a diode on its own heatsink  
Rth(ja)  
July 1999 - Ed: 4A  
1/6  

STPS10L40CT 替代型号

型号 品牌 替代类型 描述 数据表
ESAC82-004 FUJI

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