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STP10N62K3 PDF预览

STP10N62K3

更新时间: 2024-09-14 12:01:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
17页 954K
描述
N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™

STP10N62K3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.78Is Samacsys:N
雪崩能效等级(Eas):220 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:620 V最大漏极电流 (Abs) (ID):8.4 A
最大漏极电流 (ID):8.4 A最大漏源导通电阻:0.75 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):33.6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP10N62K3 数据手册

 浏览型号STP10N62K3的Datasheet PDF文件第2页浏览型号STP10N62K3的Datasheet PDF文件第3页浏览型号STP10N62K3的Datasheet PDF文件第4页浏览型号STP10N62K3的Datasheet PDF文件第5页浏览型号STP10N62K3的Datasheet PDF文件第6页浏览型号STP10N62K3的Datasheet PDF文件第7页 
STF10N62K3, STFI10N62K3,  
STI10N62K3, STP10N62K3  
N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3™  
Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages  
Datasheet production data  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
Pw  
3
2
STF10N62K3  
STFI10N62K3  
STI10N62K3  
STP10N62K3  
1
1
8.4 A(1) 30 W  
2
3
TO-220FP  
I²PAKFP  
620 V < 0.75 Ω  
TAB  
TAB  
8.4 A  
125 W  
1. Limited by package  
3
2
3
100% avalanche tested  
2
1
1
PAK  
TO-220  
Extremely high dv/dt capability  
Gate charge minimized  
Very low intrinsic capacitances  
Figure 1.  
Internal schematic diagram  
Improved diode reverse recovery  
characteristics  
'ꢀꢁꢂꢃ7$%ꢄ  
Zener-protected  
Applications  
Switching applications  
*ꢀꢅꢄ  
Description  
These SuperMESH3™ Power MOSFETs are the  
result of improvements applied to  
STMicroelectronics’ SuperMESH™ technology,  
combined with a new optimized vertical structure.  
These devices boast an extremely low on-  
resistance, superior dynamic performance and  
high avalanche capability, rendering them suitable  
for the most demanding applications.  
6ꢀꢆꢄ  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STF10N62K3  
STFI10N62K3  
STI10N62K3  
STP10N62K3  
10N62K3  
10N62K3  
10N62K3  
10N62K3  
TO-220FP  
PAKFP  
PAK  
Tube  
TO-220  
September 2012  
Doc ID 15640 Rev 4  
1/17  
This is information on a product in full production.  
www.st.com  
17  
 

STP10N62K3 替代型号

型号 品牌 替代类型 描述 数据表
STP18N55M5 STMICROELECTRONICS

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N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247
STP13NM60N STMICROELECTRONICS

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N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IP

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