Datasheet > STN80T08

STN80T08

更新时间： 2024-09-16 17:15:47

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STN80T08 数据手册

STN80T08

N Channel Enhancement Mode MOSFET

80.0A

DESCRIPTION

STN80T08 is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

PIN CONFIGURATION

TO220-3L

FEATURE

ꢀ

80V/40.0A, R_DS(ON)= 8mꢀ (Typ.)

@VGS = 10V

Super high density cell design for

extremely low R_DS(ON)

Exceptional onꢁresistance and

maximum DC current capability

TOꢁ220 package design

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN80T08 2011. V1

12 3 4 5 6 7

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