Datasheet > STN8205AA

STN8205AA

更新时间： 2024-09-15 06:14:51

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
7页	163K
描述
Dual N Channel Enhancement Mode MOSFET

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STN8205AA 数据手册

STN8205AA

Dual N Channel Enhancement Mode MOSFET

6.0A

DESCRIPTION

STN8205AA is the dual N-Channel enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application, such as notebook computer power

management and other battery powered circuits, where high-side switching is required.

FEATURE

PIN CONFIGURATION

TSSOP-8

20V/6.0A, R_DS(ON)= 30m-ohm@VGS =4.5V

D2 S2 S2 G2

20V/5.0A, R_DS(ON)=42m-ohm@VGS =2.5V

Super high density cell design for extremely

low R_DS(ON)

Exceptional low on-resistance and maximum

DC current capability

TSSOP-8 package design

STN8205AA

SYA

D1 S1 S1 G1

S：Subcontractor

Y: Year

A: Week Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STN8205AAST8RG

TSSOP-8

SYA

※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)

※ ST8205AAST8RG

ST8 : TSSOP-8; R: Tape Reel ; G: Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STN8205AA 2007. V1

12 3 4 5 6 7

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