Datasheet > STK12C68-W20

STK12C68-W20

更新时间： 2024-11-07 23:11:03

品牌	Logo	应用领域
其他 - ETC		存储内存集成电路静态存储器光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	126K
描述
8k x 8 AUTOSTORE NVSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM

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中文翻译

获取价格

数据手册

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STK12C68-W20 数据手册

STK12C68

8K x 8 AutoStore™ nvSRAM

QuantumTrap™ CMOS

Nonvolatile Static RAM

FEATURES

DESCRIPTION

• 20ns, 25ns, 35ns and 45ns Access Times

The Simtek STK12C68 is a fast static RAM with a

• “Hands-off” Automatic STORE with External

68µF Capacitor on Power Down

nonvolatile, electrically erasable PROM element

incorporated in each static memory cell. The SRAM

can be read and written an unlimited number of

times, while independent, nonvolatile data resides in

EEPROM. Data transfers from the SRAM to the

EEPROM (the STORE operation) can take place

automatically on power down. A 68µF or larger

capacitor tied from V_CAPto ground guarantees the

STORE operation, regardless of power-down slew

rate or loss of power from “hot swapping”. Transfers

from the EEPROM to the SRAM (the RECALL opera-

tion) take place automatically on restoration of

power. Initiation of STORE and RECALL cycles can

also be software controlled by entering specific read

sequences. A hardware STORE may be initiated with

the HSB pin.

• STORE to EEPROM Initiated by Hardware,

Software or AutoStore™ on Power Down

• RECALL to SRAM Initiated by Software or

Power Restore

• 10mA Typical I_CCat 200ns Cycle Time

• Unlimited READ, WRITE and RECALL Cycles

• 1,000,000 STORE Cycles to EEPROM

• 100-Year Data Retention in EEPROM

• Single 5V + 10% Operation

• Not Sensitive to Power On/Off Ramp Rates

• No Data Loss from Undershoot

• Commercial and Industrial Temperatures

• 28-Pin SOIC and DIP Packages

BLOCK DIAGRAM

PIN CONFIGURATIONS

V_CCX

V_CAP

CCX

CAP

HSB

POWER

CONTROL

EEPROM ARRAY

128 x 512

A₅

A₆

STORE

STORE/

RECALL

CONTROL

HSB

A₇

STATIC RAM

28 - 300 PDIP

28 - 600 PDIP

28 - 350 SOIC

28 - 300 CDIP

RECALL

A₈

ARRAY

128 x 512

A₉

A₁₁

A₁₂

SOFTWARE

DETECT

A₀- A₁₂

PIN NAMES

DQ₀

DQ₁

DQ₂

COLUMN I/O

A - A

Address Inputs

COLUMN DEC

DQ -DQ

Data In/Out

DQ₃

DQ₄

DQ₅

DQ₆

DQ₇

Chip Enable

Write Enable

Output Enable

Hardware Store Busy (I/O)

Power (+ 5V)

Capacitor

A₀A₁A₂A₃A₄A₁₀

HSB

CCX

CAP

Ground

July 1999

4-41

12 3 4 5 6 7...12

中文翻译

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与STK12C68-W20相关器件

型号	品牌	获取价格	描述	数据表
STK12C68-W20I	ETC	获取价格	8k x 8 AUTOSTORE NVSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
STK12C68-W25	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-W25I	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-W25M	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-W30	ETC	获取价格	NVRAM (EEPROM Based)
STK12C68-W30I	ETC	获取价格	NVRAM (EEPROM Based)
STK12C68-W35	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-W35I	SIMTEK	获取价格	Non-Volatile SRAM, 8KX8, 35ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
STK12C68-W35M	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-W45	ETC	获取价格	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No

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