Datasheet > STI6N90K5

STI6N90K5

更新时间： 2024-09-17 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	716K
描述
N沟道900 V、0.91 Ohm典型值、6 A MDmesh K5功率MOSFET，I2PAK封装

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STI6N90K5 数据手册

STI6N90K5

N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5

Power MOSFET in an I²PAK package

Datasheet - production data

Features

Order code

TAB

V_DS

R_DS(on)max.

I_D

STI6N90K5

900 V

1.10 Ω

6 A



Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

I²PAK

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STI6N90K5

6N90K5

I²PAK

Tube

November 2016

DocID029949 Rev 1

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

中文翻译

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