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STHU32N65DM6AG PDF预览

STHU32N65DM6AG

更新时间: 2024-11-10 14:58:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 654K
描述
Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package

STHU32N65DM6AG 数据手册

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STHU32N65DM6AG  
Datasheet  
Automotive-grade N-channel 650 V, 83 mΩ typ., 37 A MDmesh DM6  
Power MOSFET in an HU3PAK package  
Features  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
TAB  
STHU32N65DM6AG  
650 V  
97 mΩ  
37 A  
7
AEC-Q101 qualified  
1
Fast-recovery body diode  
HU3PAK  
Lower RDS(on) x area vs previous generation  
Low gate charge, input capacitance and resistance  
100% avalanche tested  
Drain(TAB)  
Extremely dv/dt ruggedness  
Zener-protected  
Excellent switching performance thanks to the extra driving source pin  
Gate(1)  
Applications  
Switching applications  
Driver  
source (2)  
Power  
source (3, 4, 5, 6, 7)  
Description  
N-chG1DS2PS34567DTABZ  
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-  
recovery diode series. Compared with the previous MDmesh fast generation,  
DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent  
improvement in RDS(on) per area with one of the most effective switching behaviors  
available in the market for the most demanding high-efficiency bridge topologies and  
ZVS phase-shift converters.  
Product status link  
STHU32N65DM6AG  
Product summary  
Order code  
STHU32N65DM6AG  
32N65DM6  
Marking  
Package  
Packing  
HU3PAK  
Tape and reel  
DS13782 - Rev 3 - November 2021  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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