Datasheet > STHV748

STHV748

更新时间： 2024-11-29 06:14:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		脉冲脉冲发生器
页数	文件大小	规格书
22页	555K
描述
5-level, ±90 V, 2 A high-speed pulser with four independent channels

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STHV748 数据手册

STHV748

5-level, ±±0 ꢀ, 2 A high-speed pulser

with four independent channels

Preliminary data

Features

■ High-density ultrasound transmitter

■ 0 to ±±0 ꢀ output voltage

■ Up to 20 MHz operating frequency

■ Low-power, high-voltage drivers

QFN64 9 x 9 x1.0 mm

■ 2 independently supplied half bridges for each

channel in pulse wave (PW) mode

Applications

– 5-level output waveform

– ±2 A source and sink current

– Down to 20 ps jitter

– Anti-cross conduction function

– Low 2nd harmonic distortion

– Fine-tuning on propagation delay

■ Medical ultrasound imaging

■ Pulse waveform generator

■ NDT ultrasound transmission

■ Piezoelectric transducers driver

■ Fully integrated clamping-to-ground function

– 6 Ω synchronous active clamp

Description

This monolithic, high-voltage, high-speed pulser

generator features four independent channels. It

is designed for medical ultrasound applications,

but can also be used for other piezoelectric,

capacitive or MEMS transducers. The device

comprises a controller logic interface circuit, level

translators, MOSFET gate drivers, noise blocking

diodes and high-power P-channel and N-channel

MOSFETs as output stage for each channel,

clamping-to-ground circuitry, anti-leakage, anti-

memory effect block, thermal sensor and Hꢀ

receiver switch (HꢀR_SW) which guarantees a

strong decoupling during transmission phase.

Moreover the STHꢀ748 includes self biasing and

thermal shutdown blocks (see Figure 1).

– Anti-leakage on output node

■ Dedicated half bridge for continuous wave

(CW) mode on each

– Down to 0.1 W power consumption

– ±0.6 A source and sink current

– Down to 10 ps jitter

■ Fully integrated Hꢀ receiver switch

– 13.5 Ω on resistance

– Hꢀ MOS topology to minimize current

consumption

– Up to 300 MHz BW

■ 2.4 ꢀ to 3.6 ꢀ CMOS logic interface

■ Auxiliary integrated circuits

– Noise blocking diodes

Each channel can support up to five active output

levels with two half bridges. The output stage of

each channel is able to provide ±2 A peak output

current. In order to reduce power dissipation

during continuous wave mode, the peak current is

limited to 0.6 A (a dedicated half bridge is used).

– Fully self-biaising architecture

– Anti-memory effect for all internal Hꢀ

nodes

– Thermal protection

– Stand by function

Table 1.

Device summary

■ Latch-up free due to Hꢀ SOI technology

Order code

Package

Packaging

■ ꢀery few external passive components needed

STHꢀ748QTR

QFN64

Tape and reel

January 2010

Doc ID 15450 Rev 1

1/22

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...22

中文翻译

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与STHV748相关器件

型号	品牌	获取价格	描述	数据表
STHV748QTR	STMICROELECTRONICS	获取价格	5-level, ±90 V, 2 A high-speed pulser with fo
STHV748S	STMICROELECTRONICS	获取价格	四通道+/- 90 V、+/- 2 A、3/5级增强ESD保护高速超声脉冲发生器
STHV800	STMICROELECTRONICS	获取价格	Octal Â±90 V, Â±2 A, 3-level RTZ, high-speed
STHV800L	STMICROELECTRONICS	获取价格	Octal Â±90 V, Â±2 A, 3-level RTZ, high-speed
STHV82	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5.5A I(D) \| TO-218
STHV82FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3.6A I(D) \| TO-218VAR
STHVUP32	STMICROELECTRONICS	获取价格	32 channels ±100 V, ±0.4/0.8 A, 3/5-level RTZ, TR switch, high-speed ultrasound
STHVUP64	STMICROELECTRONICS	获取价格	STHVUP64
STHW-650-N	BOURNS	获取价格	Sealed Tact Switch
STHW-650-NTR	BOURNS	获取价格	Sealed Tact Switch

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