Datasheet > STHU47N60DM6AG

STHU47N60DM6AG

更新时间： 2024-11-30 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	664K
描述
Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in an HU3PAK package

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STHU47N60DM6AG 数据手册

STHU47N60DM6AG

Datasheet

Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh DM6

Power MOSFET in an HU3PAK package

Features

DS(on)

max.

Order code

TAB

STHU47N60DM6AG

600 V

80 mΩ

36 A

•

AEC-Q101 qualified

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

HU3PAK

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Drain(TAB)

Excellent switching performance thanks to the extra driving source pin

Gate(1)

Applications

•

Switching applications

Driver

source (2)

Power

source (3, 4, 5, 6, 7)

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

N-chG1DS2PS34567DTABZ

Product status link

STHU47N60DM6AG

Product summary

Order code

STHU47N60DM6AG

47N60DM6

Marking

Package

Packing

HU3PAK

Tape and reel

DS13046 - Rev 3 - November 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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