Datasheet > STF4A60

STF4A60

更新时间： 2024-11-25 21:55:11

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描述
Bi-Directional Triode Thyristor

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STF4A60 数据手册

SemiWell Semiconductor

STF4A60

UL : E228720

Bi-Directional Triode Thyristor

Symbol

○ 2.T2

Features

▼▲

◆ Repetitive Peak Off-State Voltage : 600V

○

3.Gate

◆ R.M.S On-State Current ( I

= 4 A )

T(RMS)

◆ High Commutation dv/dt

○

1.T1

TO-220F

General Description

This device is suitable for direct coupling to TTL, HTL, CMOS

and application such as various logic functions, low power

AC switching applications, such as fan speed, small light

controllers and home appliance equipment.

Absolute Maximum Ratings ( T_J= 25°C unless otherwise specified )

Symbol

V_DRM

Parameter

Repetitive Peak Off-State Voltage

R.M.S On-State Current

Condition

Ratings

600

Units

T_C= 99 °C

I_T(RMS)

4.0

One Cycle, 50Hz/60Hz, Peak,

Non-Repetitive

I_TSM

Surge On-State Current

30/33

I²t

P_GM

P_G(AV)

I_GM

4.5

1.5

I²t

A²s

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage

Operating Junction Temperature

Storage Temperature

Mass

0.1

1.0

V_GM

T_J

7.0

- 40 ~ 125

- 40 ~ 150

2.0

°C

T_STG

Aug, 2003. Rev. 1

1/6

12 3 4 5 6

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