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STF4LNK60Z PDF预览

STF4LNK60Z

更新时间: 2024-11-23 06:14:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
11页 201K
描述
N-channel 600 V, 2.2 Ω, 3.3 A, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET

STF4LNK60Z 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.76
配置:Single最大漏极电流 (Abs) (ID):3.3 A
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

STF4LNK60Z 数据手册

 浏览型号STF4LNK60Z的Datasheet PDF文件第2页浏览型号STF4LNK60Z的Datasheet PDF文件第3页浏览型号STF4LNK60Z的Datasheet PDF文件第4页浏览型号STF4LNK60Z的Datasheet PDF文件第5页浏览型号STF4LNK60Z的Datasheet PDF文件第6页浏览型号STF4LNK60Z的Datasheet PDF文件第7页 
STD4LNK60Z  
STF4LNK60Z  
N-channel 600 V, 2.2 , 3.3 A, TO-220FP, DPAK  
Zener-protected SuperMESH™ Power MOSFET  
Preliminary Data  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
Pw  
STD4LNK60Z 600 V  
STF4LNK60Z 600 V  
< 2.7 Ω  
< 2.7 Ω  
3.3 A  
3.3 A  
70 W  
25 W  
3
3
1
2
1
Extremely high dv/dt capability  
100% avalanche tested  
DPAK  
TO-220FP  
Gate charge minimized  
Very low intrinsic capacitances  
Improved ESD capability  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established  
strip-based PowerMESH™ layout. In addition to  
pushing on-resistance significantly down, special  
care is taken to ensure a very good dv/dt  
capability for the most demanding applications.  
Such series complements ST’s full range of high  
voltage Power MOSFETs including revolutionary  
MDmesh™ products.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
TO-220FP  
Packaging  
STD4LNK60Z  
STF4LNK60Z  
4LNK60Z  
4LNK60Z  
Tape and reel  
Tube  
July 2008  
Rev 1  
1/11  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
11  

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