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STF42N60M2-EP PDF预览

STF42N60M2-EP

更新时间: 2024-09-16 14:57:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
16页 633K
描述
N沟道600 V、0.076 Ohm典型值、34 A MDmesh M2 EP功率MOSFET,TO-220FP封装

STF42N60M2-EP 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.51峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STF42N60M2-EP 数据手册

 浏览型号STF42N60M2-EP的Datasheet PDF文件第2页浏览型号STF42N60M2-EP的Datasheet PDF文件第3页浏览型号STF42N60M2-EP的Datasheet PDF文件第4页浏览型号STF42N60M2-EP的Datasheet PDF文件第5页浏览型号STF42N60M2-EP的Datasheet PDF文件第6页浏览型号STF42N60M2-EP的Datasheet PDF文件第7页 
STF42N60M2-EP,  
STFW42N60M2-EP  
N-channel 600 V, 0.076 typ., 34 A MDmesh™ M2 EP  
Power MOSFETs in TO-220FP and TO-3PF packages  
Datasheet  
production data  
Features  
VDS  
TJmax  
@
RDS(on)  
max  
Order codes  
ID  
STF42N60M2-EP  
650 V  
0.087 34 A  
STFW42N60M2-EP  
3
2
Extremely low gate charge  
1
Excellent output capacitance (COSS) profile  
Very low turn-off switching losses  
100% avalanche tested  
TO-220FP  
TO-3PF  
Zener-protected  
Figure 1. Internal schematic diagram  
Applications  
'ꢀꢁꢂ  
Switching applications  
Tailored for very high frequency converters  
(f > 150 kHz)  
Description  
*ꢀꢃꢂ  
These devices are N-channel Power MOSFETs  
developed using MDmesh™ M2 EP enhanced  
performance technology. Thanks to their strip  
layout and improved vertical structure, the  
devices exhibit low on-resistance and optimized  
switching characteristics with very low turn-off  
switching losses, rendering them suitable for the  
most demanding very high frequency converters.  
6ꢀꢄꢂ  
AM01476v1  
Table 1. Device summary  
Order codes  
Marking  
Package  
Packaging  
STF42N60M2-EP  
TO-220FP  
TO-3PF  
42N60M2EP  
Tube  
STFW42N60M2-EP  
January 2015  
DocID027376 Rev 1  
1/16  
www.st.com  

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