STDD15-07P6

更新时间： 2024-09-09 04:01:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
3页	21K
描述
LOW CAPACITANCE DETECTION DIODE

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中文翻译

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数据手册

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STDD15-07P6 数据手册

STDD15-07P6

LOW CAPACITANCE DETECTION DIODE

PRELIMINARY DATASHEET

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

10 mA

15 V

Tj (max)

V_F(max)

150 °C

0.51 V

SOT-666

FEATURES AND BENEFITS

■

Low diode capacitance

Device designed for RF application

Low profile package

40% space saving versus SOT-323

Very low parasitic inductor & resistor

SCHEMATIC DIAGRAM

DESCRIPTION

The STDD15-07P6 is a dual diode series for the

detection of a RF signal and the compensation of

the voltage drift with the temperature. The

SOT-666 package makes the device ideal in

application where the space saving is critical like

mobile phones.

Parallel configuration

STDD15-07P6

The low junction capacitance will reduce the

disturbance on the RF signal.

ABSOLUTE RATINGS (limiting values)

Symbol

V_RRM

I_F

Parameter

Repetitive peak reverse voltage

Value

Unit

Continuous forward current

I_FSM

T_stg

Surge non repetitive forward current

Storage temperature range

Half wave, single phase, 60Hz

- 65 + 150

150

°C

Maximum operating junction temperature

November 2003 - Ed: 1A

1/3

12 3

中文翻译

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