Datasheet > STD25N10F7

STD25N10F7

更新时间： 2023-12-20 18:45:16

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
21页	1281K
描述
N沟道100 V、0.027 Ohm典型值、25 A STripFET F7功率MOSFET，DPAK封装

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STD25N10F7 数据手册

STD25N10F7,

STF25N10F7, STP25N10F7

N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™

Power MOSFET in DPAK, TO-220FP and TO-220 packages

Datasheet

production data

Features

TAB

R_DS(on)

max.⁽¹⁾

Order codes

V_DSS

I_D

P_TOT

DPAK

STD25N10F7

STF25N10F7

STP25N10F7

100 V 0.035 Ω 25 A 40 W

100 V 0.035 Ω 19 A 25 W

100 V 0.035 Ω 25 A 50 W

TAB

1. @ V = 10 V

• Ultra low on-resistance

• 100% avalanche tested

TO-220FP

TO-220

Applications

Figure 1. Internal schematic diagram

• Switching applications

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Description

These devices utilize the 7^thgeneration of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure. The resulting Power

MOSFET exhibits the lowest R_DS(on)in all

packages.

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Table 1. Device summary

Order codes

Marking

Package

Packaging

STD25N10F7

STF25N10F7

STP25N10F7

25N10F7

DPAK

TO-220FP

TO-220

Tape and reel

Tube

September 2013

DocID025265 Rev 1

1/21

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...21

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