Datasheet > STAN250A

STAN250A

更新时间： 2024-10-26 22:42:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频微波电子航空
页数	文件大小	规格书
5页	70K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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中文翻译

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数据手册

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STAN250A 数据手册

SD8250

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

5:1 VSWR CAPABILITY @ 1.75 dB RF

OVERDRIVE

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

.400 x .400 2LFL (S036)

METAL/CERAMIC HERMETIC PACKAGE

hermetically sealed

P_OUT250 W MIN. WITH 8.0 dB GAIN

ORDER CODE

BRANDING

STAN250A

SD8250

PIN CONNECTION

DESCRIPTION

The SD8250 is a high power Class C transistor

specifically designed for TACAN/DME pulsed out-

put and driver applications.

This device is designed for operation under mod-

erate pulse width and duty cycle pulse conditions

and is capable of withstanding 5:1 output VSWR

at rated RF overdrive.

Low RF thermal resistance and computerized au-

tomatic wire bonding techniques ensure high re-

liability and product consistency.

1. Collector

2. Base

3. Emitter

4. Base

The SD8250 is supplied in the AMPAC Hermetic

Metal/Ceramic package with internal Input/Output

matching structures.

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

P_DISS

I_C

Parameter

Power Dissipation* (T_C≤ 90°C)

Device Current*

Value

575

Unit

V_CC

T_J

Collector-Supply Voltage*

Junction Temperature (Pulsed RF Operation)

Storage Temperature

250

T_STG

− 65 to +200

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance⁽¹⁾

0.28

°C/W

*Applies only to rated RF amplifier operation

(1) Infra-Red Scan of Hot Spot Junction Temperature at Rated RF Operating Conditions

July 19, 1994

1/5

12 3 4 5

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