Datasheet > SSTDPAD5-SOIC-8L

SSTDPAD5-SOIC-8L

更新时间： 2024-09-17 15:52:59

品牌	Logo	应用领域
凌特 - Linear		测试
页数	文件大小	规格书
2页	322K
描述
Diode,

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中文翻译

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技术参数
数据手册

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SSTDPAD5-SOIC-8L 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.67	最大正向电压 (VF)：	1.5 V
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大重复峰值反向电压：	30 V	最大反向电流：	0.000005 µA
反向测试电压：	20 V	子类别：	Other Diodes
表面贴装：	YES	Base Number Matches：	1

SSTDPAD5-SOIC-8L 数据手册

DPAD SERIES

MONOLITHIC DUAL

PICO AMPERE DIODES

FEATURES

Direct Replacement For SILICONIX DPAD SERIES

HIGH ON ISOLATION

DPAD1

TO-78

DPAD

TO-72

20fA

Top View

Case & Substrate

Top View

EXCELLENT CAPACITANCE MATCHING

ABSOLUTE MAXIMUM RATINGS¹

@ 25°C (unless otherwise stated)

Maximum Temperatures

ΔC_R≤0.2pF

SSTDPAD

Storage Temperature

-55ºC to +150°C

SOIC

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation (DPAD)³

Maximum Currents

500mW

50mA

Forward Current (DPAD)

* Case and Pin 4 must be floating on

all TO-78 case devices

COMMON ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN. TYP. MAX. UNITS CONDITIONS

-45

DPAD2,5,10,20,50,100 -45

DPAD1

Reverse Breakdown

Voltage

BV_R

I_R= -1µA

SSTDPAD5,50,100

-30

V_F

Forward Voltage

Differential Capacitance

(ΔC_R)

0.8

1.5

0.2

0.5

0.8

2.0

4.0

I_F= 1mA

DPAD1

ALL OTHERS

DPAD1

V_R1= V_R2= -5V, f=1MHz

│C_R1- C_R2

│

C_rss

Total Reverse Capacitance DPAD2,5,10,20,50,100

SSTDPAD5,50,100

V_R= -5V, f=1MHz

SPECIFIC ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise stated)

SYMBOL

CHARACTERISTIC

DPAD²

SSTDPAD²

UNITS CONDITIONS

(SST)DPAD1

(SST)DPAD2

(SST)DPAD5

(SST)DPAD10

(SST)DPAD20

(SST)DPAD50

(SST)DPAD100

-1

-2

-5

Maximum Reverse

Leakage Current²

I_R

-10

-20

-50

-100

V_R= -20V

-50

-100

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201145 5/16/2013 Rev#A4 ECN# DPAD Series

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