Datasheet > SST5116_SOT-23

SST5116_SOT-23

更新时间： 2024-10-27 09:03:51

品牌	Logo	应用领域
MICROSS		/
页数	文件大小	规格书
1页	272K
描述
P-CHANNEL JFET

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数据手册

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SST5116_SOT-23 数据手册

SST5116

P-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST5116

FEATURES

This analog switch is designed for inverting switching

DIRECT REPLACEMENT FOR SILICONIX SST5116

LOW ON RESISTANCE

into inverting input of an Operational Amplifier.

r_DS(on)≤ 150Ω

LOW CAPACITANCE

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

6pF

The SOT-23 provides a low cost option and ease of

manufacturing.

Maximum Temperatures

(See Packaging Information).

Storage Temperature

‐55°C to +200°C

SST5116 Benefits:

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Low On Resistance

_D(off)≤ 500 pA

Switches directly from TTL logic

500mW

SST5116 Applications:

Gate Current (Note 1)

I_G= ‐50mA

Analog Switches

Commutators

Choppers

MAXIMUM VOLTAGES

Gate to Drain Voltage

Gate to Source Voltage

V_GDS= 30V

V_GSS= 30V

SST5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

V_GS(F)

CHARACTERISTIC

MIN

‐‐

‐5

‐‐

TYP.

‐‐

‐0.7

‐1.0

‐0.7

‐0.5

‐‐

‐5

‐10

‐‐

MAX

‐‐

‐1

‐‐

UNITS

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Forward Voltage

I_G= 1µA, V_DS= 0V

V_DS= ‐15V, I_D= ‐1nA

I_G= ‐1mA, V_DS= 0V

V_GS= 0V, I_D= ‐15mA

V_DS(on)

Drain to Source On Voltage

‐‐

V_GS= 0V, I_D= ‐7mA

V_GS= 0V, I_D= ‐3mA

V_DS= ‐15V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_DS= ‐15V, I_D= ‐1mA

V_DS= ‐15V, V_GS= 12V

V_DS= ‐15V, V_GS= 7V

V_DS= ‐15V, V_GS= 5V

I_D= ‐1mA, V_GS= 0V

‐0.6

‐25

500

‐‐

I_DSS

I_GSS

I_G

Drain to Source Saturation Current (Note 2)

Gate Reverse Current

Gate Operating Current

‐‐

I_D(off)

Drain Cutoff Current

‐500

150

r_DS(on)

Drain to Source On Resistance

Click To Buy

SST5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

g_os

r_DS(on)

C_iss

CHARACTERISTIC

Forward Transconductance

Output Conductance

Drain to Source On Resistance

Input Capacitance

MIN

‐‐

TYP.

4.5

‐‐

MAX

‐‐

150

‐‐

UNITS

µS

CONDITIONS

V_DS= ‐15V, I_D= 1mA , f = 1kHz

I_D= 0A, V_GS= 0V, f = 1kHz

V_DS= ‐15V, V_GS= 0V, f = 1MHz

V_DS= 0V, V_GS= 12V, f = 1MHz

V_DS= 0V, V_GS= 7V, f = 1MHz

V_DS= 0V, V_GS= 5V, f = 1MHz

V_DG= 10V, I_D= 10mA , f = 1kHz

‐‐

C_rss

Reverse Transfer Capacitance

‐‐

e_n

Equivalent Noise Voltage

‐‐

nV/√Hz

SST5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

UNITS

CONDITIONS

Turn On Time

V_GS(L) = ‐5V

V_GS(H) = 0V

Turn On Rise Time

Turn Off Time

t_d(off)

t_f

See Switching Circuit

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which SST5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

SST5116 SWITCHING CIRCUIT PARAMETERS

SWITCHING TEST CIRCUIT

V_DD

V_GG

R_L

‐6V

SOT-23 (Top View)

Available Packages:

SST5116 in SOT-23

SST5116 in bare die.

2kΩ

390Ω

‐3mA

R_G

I_D(on)

Please contact Micross for full

package and die dimensions

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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与SST5116_SOT-23相关器件

型号	品牌	获取价格	描述	数据表
SST5116-SOT-23	MICROSS	获取价格	TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, SOT-23, 3 PIN, FET General Purpose Small Sig
SST511-LF	CALOGIC	获取价格	Current Regulator Diode, 4.7mA I(S), 4.2V V(L), Silicon, PLASTIC PACKAGE-3
SST511T	TEMIC	获取价格	Current Regulator Diode, 4.7mA I(S), 4.2V V(L), Silicon, TO-236, TO-236, 3 PIN
SST511T2	CALOGIC	获取价格	Current Regulator Diode, 4.7mA I(S), 4.2V V(L), Silicon, SURFACE MOUNT PACKAGE-3
SST511T-E3	VISHAY	获取价格	Current Regulator Diode, 4.7mA I(S), 4.2V V(L), Silicon, TO-236, SURFACE MOUNT PACKAGE-3
SST511TT1	TEMIC	获取价格	Current Regulator Diode, 4.7mA I(S), 4.2V V(L), Silicon, TO-236, TO-236, 3 PIN
SST511TT1-E3	VISHAY	获取价格	DIODE 4.7 mA, SILICON, CURRENT REGULATOR DIODE, TO-236AB, LEAD FREE, TO-236, 3 PIN, Curren
SST511TT2	VISHAY	获取价格	Current Regulator Diode, 4.7mA I(S), 4.2V V(L), Silicon, TO-236AB, TO-236, 3 PIN
SST5198NL	VISHAY	获取价格	Monolithic N-Channel JFET Duals
SST5198NL-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SOIC-8

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