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SST5115_SOT-23 PDF预览

SST5115_SOT-23

更新时间: 2024-10-27 09:03:51
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描述
P-CHANNEL JFET

SST5115_SOT-23 数据手册

  
SST5115  
P-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix SST5115  
FEATURES  
This analog switch is designed for inverting switching  
DIRECT REPLACEMENT FOR SILICONIX SST5115  
LOW ON RESISTANCE  
into inverting input of an Operational Amplifier.  
rDS(on) 100Ω  
LOW CAPACITANCE  
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  
6pF  
The SOT-23 provides a low cost option and ease of  
manufacturing.  
Maximum Temperatures  
(See Packaging Information).  
Storage Temperature  
55°C to +200°C  
55°C to +200°C  
SST5115 Benefits:  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
ƒ
ƒ
ƒ
Low On Resistance  
D(off) 500 pA  
Switches directly from TTL logic  
I
500mW  
SST5115 Applications:  
Gate Current (Note 1)  
IG = 50mA  
ƒ
ƒ
ƒ
Analog Switches  
Commutators  
Choppers  
MAXIMUM VOLTAGES  
Gate to Drain Voltage  
Gate to Source Voltage  
VGDS = 30V  
VGSS = 30V  
SST5115 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
VGS(F)  
CHARACTERISTIC  
MIN  
30  
3
‐‐  
‐‐  
‐‐  
‐‐  
15  
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
0.7  
1.0  
0.7  
0.5  
‐‐  
5
5  
10  
10  
10  
‐‐  
MAX  
‐‐  
6
1  
‐‐  
0.8  
‐‐  
60  
500  
‐‐  
‐‐  
500  
‐‐  
UNITS  
V
CONDITIONS  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Gate to Source Forward Voltage  
IG = 1µA, VDS = 0V  
VDS = 15V, ID = 1nA  
IG = 1mA, VDS = 0V  
VGS = 0V, ID = 15mA  
VDS(on)  
Drain to Source On Voltage  
VGS = 0V, ID = 7mA  
VGS = 0V, ID = 3mA  
VDS = 15V, VGS = 0V  
VGS = 20V, VDS = 0V  
VDS = 15V, ID = 1mA  
VDS = 15V, VGS = 12V  
VDS = 15V, VGS = 7V  
VDS = 15V, VGS = 5V  
ID = 1mA, VGS = 0V  
IDSS  
IGSS  
IG  
Drain to Source Saturation Current (Note 2)  
Gate Reverse Current  
mA  
pA  
Gate Operating Current  
‐‐  
‐‐  
‐‐  
‐‐  
ID(off)  
Drain Cutoff Current  
rDS(on)  
Drain to Source On Resistance  
100  
Ω
Click To Buy  
SST5115 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
gfs  
gos  
rDS(on)  
Ciss  
CHARACTERISTIC  
Forward Transconductance  
Output Conductance  
Drain to Source On Resistance  
Input Capacitance  
MIN  
‐‐  
‐‐  
‐‐  
‐‐  
TYP.  
4.5  
20  
‐‐  
20  
5
MAX  
‐‐  
‐‐  
100  
25  
‐‐  
UNITS  
mS  
µS  
CONDITIONS  
VDS = 15V, ID = 1mA , f = 1kHz  
Ω
ID = 0A, VGS = 0V, f = 1kHz  
VDS = 15V, VGS = 0V, f = 1MHz  
VDS = 0V, VGS = 12V, f = 1MHz  
VDS = 0V, VGS = 7V, f = 1MHz  
VDS = 0V, VGS = 5V, f = 1MHz  
VDG = 10V, ID = 10mA , f = 1kHz  
pF  
‐‐  
Crss  
Reverse Transfer Capacitance  
‐‐  
6
7
‐‐  
‐‐  
6
en  
Equivalent Noise Voltage  
‐‐  
20  
‐‐  
nV/Hz  
SST5115 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
td(on)  
tr  
CHARACTERISTIC  
UNITS  
CONDITIONS  
Turn On Time  
10  
20  
8
VGS(L) = 7V  
VGS(H) = 0V  
Turn On Rise Time  
Turn Off Time  
ns  
td(off)  
tf  
See Switching Circuit  
Turn Off Fall Time  
30  
Note 1 Absolute maximum ratings are limiting values above which SST5115 serviceability may be impaired. Note 2 – Pulse test: PW300 µs, Duty Cycle 3%  
SST5115 SWITCHING CIRCUIT PARAMETERS  
SWITCHING TEST CIRCUIT  
VDD  
VGG  
RL  
6V  
SOT-23 (Top View)  
Available Packages:  
12V  
SST5115 in SOT-23  
SST5115 in bare die.  
910Ω  
220Ω  
7mA  
RG  
ID(on)  
Please contact Micross for full  
package and die dimensions  
Micross Components Europe  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  

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