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SST39VF1602C PDF预览

SST39VF1602C

更新时间: 2024-11-30 14:54:39
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美国微芯 - MICROCHIP /
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38页 1415K
描述
The SST39VF1602C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST propr

SST39VF1602C 数据手册

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SST39VF1601C/SST39VF1602C  
16 Mbit (x16) Multi-Purpose Flash Plus  
The SST39VF1601C / SST39VF1602C devices are 1M x16 CMOS Multi-Purpose  
Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS  
SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec-  
tor attain better reliability and manufacturability compared with alternate  
approaches. The SST39VF1601C / SST39VF1602C write (Program or Erase)  
with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin-  
outs for x16 memories.  
- Data# Polling  
- Ready/Busy# Pin  
1.0  
FEATURES  
• Organized as 1M x16: SST39VF1601C/1602C  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
• CMOS I/O Compatibility  
• JEDEC Standard  
- Flash EEPROM Pinouts and command sets  
• Packages Available  
• Superior Reliability  
- Endurance: 100,000 Cycles (Typical)  
- Greater than 100 years Data Retention  
- 48-lead TSOP (12mm x 20mm)  
- 48-ball TFBGA (6mm x 8mm)  
- 48-ball WFBGA (4mm x 6mm)  
• Low Power Consumption (typical values at 5  
MHz)  
• All devices are RoHS compliant  
- Active Current: 9 mA (typical)  
- Standby Current: 3 µA (typical)  
- Auto Low Power Mode: 3 µA (typical)  
2.0  
PRODUCT DESCRIPTION  
• Hardware Block-Protection/WP# Input Pin  
The SST39VF1601C and SST39VF1602C devices are  
1M x16 CMOS Multi-Purpose Flash Plus (MPF+) man-  
ufactured with SST proprietary, high performance  
CMOS SuperFlash technology. The split-gate cell  
design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alter-  
nate approaches. The SST39VF160xC writes (Pro-  
gram or Erase) with a 2.7-3.6V power supply. These  
devices conform to JEDEC standard pinouts for x16  
memories.  
- Top Block-Protection (top 8 KWord)  
- Bottom Block-Protection (bottom 8 KWord)  
• Sector-Erase Capability  
- Uniform 2 KWord sectors  
• Block-Erase Capability  
- Flexible block architecture; one 8-, two 4-, one  
16-, and thirty one 32-KWord blocks  
• Chip-Erase Capability  
• Erase-Suspend/Erase-Resume Capabilities  
• Hardware Reset Pin (RST#)  
• Latched Address and Data  
• Security-ID Feature  
Featuring high performance Word-Program, the  
SST39VF1601C/1602C devices provide a typical  
Word-Program time of 7 µsec. These devices use Tog-  
gle Bit, Data# Polling, or the RY/BY# pin to indicate the  
completion of Program operation. To protect against  
inadvertent write, they have on-chip hardware and  
Software Data Protection schemes. Designed, manu-  
factured, and tested for a wide spectrum of applica-  
tions, these devices are offered with a guaranteed  
typical endurance of 100,000 cycles. Data retention is  
rated at greater than 100 years.  
- SST: 128 bits; User: 128 words  
• Fast Read Access Time:  
- 70 ns  
• Fast Erase and Word-Program:  
- Sector-Erase Time: 18 ms (typical)  
- Block-Erase Time: 18 ms (typical)  
- Chip-Erase Time: 40 ms (typical)  
- Word-Program Time: 7 µs (typical)  
The SST39VF1601C/1602C devices are suited for  
applications that require convenient and economical  
updating of program, configuration, or data memory.  
For all system applications, they significantly improve  
performance and reliability, while lowering power  
consumption. They inherently use less energy during  
• Automatic Write Timing  
- Internal VPP Generation  
• End-of-Write Detection  
- Toggle Bits  
2015-2018 Microchip Technology Inc.  
DS20005018B-page 1  

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