5秒后页面跳转
捷配首页

Datasheet > SST39VF1602C-70-4I-B3KE
SST39VF1602C-70-4I-B3KE PDF预览

SST39VF1602C-70-4I-B3KE

更新时间： 2024-11-29 14:36:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器内存集成电路闪存
页数 文件大小 规格书
33页 908K
描述
1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-1, TFBGA-48

阅读下载

中文翻译

获取价格

SST39VF1602C-70-4I-B3KE 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：BGA
包装说明：TFBGA, BGA48,6X8,32针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51Factory Lead Time：7 weeks
风险等级：5.49Is Samacsys：N
最长访问时间：70 ns其他特性：TOP BOOT BLOCK
启动块：TOP命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48JESD-609代码：e1
长度：8 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
部门数/规模：1,2,1,31端子数量：48
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装等效代码：BGA48,6X8,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：8K,4K,16K,32K最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.035 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40切换位：YES
类型：NOR TYPE宽度：6 mm
Base Number Matches：1

SST39VF1602C-70-4I-B3KE 数据手册

 浏览型号SST39VF1602C-70-4I-B3KE的Datasheet PDF文件第2页浏览型号SST39VF1602C-70-4I-B3KE的Datasheet PDF文件第3页浏览型号SST39VF1602C-70-4I-B3KE的Datasheet PDF文件第4页浏览型号SST39VF1602C-70-4I-B3KE的Datasheet PDF文件第5页浏览型号SST39VF1602C-70-4I-B3KE的Datasheet PDF文件第6页浏览型号SST39VF1602C-70-4I-B3KE的Datasheet PDF文件第7页 
16 Mbit (x16) Multi-Purpose Flash Plus  
SST39VF1601C / SST39VF1602C  
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories  
Data Sheet  
FEATURES:  
•
•
Organized as 1M x16: SST39VF1601C/1602C  
Single Voltage Read and Write Operations  
– 2.7-3.6V  
•
•
•
Security-ID Feature  
– SST: 128 bits; User: 128 words  
Fast Read Access Time:  
– 70 ns  
•
•
Superior Reliability  
– Endurance: 100,000 Cycles (Typical)  
– Greater than 100 years Data Retention  
Fast Erase and Word-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 40 ms (typical)  
– Word-Program Time: 7 µs (typical)  
Low Power Consumption (typical values at 5 MHz)  
– Active Current: 9 mA (typical)  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode: 3 µA (typical)  
Hardware Block-Protection/WP# Input Pin  
– Top Block-Protection (top 8 KWord)  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
•
– Bottom Block-Protection (bottom 8 KWord)  
– Toggle Bits  
•
•
Sector-Erase Capability  
– Uniform 2 KWord sectors  
Block-Erase Capability  
– Flexible block architecture; one 8-, two 4-, one  
16-, and thirty one 32-KWord blocks  
– Data# Polling  
– Ready/Busy# Pin  
•
•
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
•
•
•
•
Chip-Erase Capability  
•
Packages Available  
Erase-Suspend/Erase-Resume Capabilities  
Hardware Reset Pin (RST#)  
Latched Address and Data  
– 48-lead TSOP (12mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm)  
– 48-ball WFBGA (4mm x 6mm)  
•
All devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST39VF1601C and SST39VF1602C devices are  
1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manu-  
factured with SST proprietary, high performance CMOS  
SuperFlash technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
The SST39VF160xC writes (Program or Erase) with a  
2.7-3.6V power supply. These devices conform to JEDEC  
standard pinouts for x16 memories.  
reliability, while lowering power consumption. They inher-  
ently use less energy during Erase and Program than alter-  
native flash technologies. The total energy consumed is a  
function of the applied voltage, current, and time of applica-  
tion. Since for any given voltage range, the SuperFlash  
technology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase or  
Program operation is less than alternative flash technolo-  
gies. These devices also improve flexibility while lowering  
the cost for program, data, and configuration storage appli-  
cations.  
Featuring high performance Word-Program, the  
SST39VF1601C/1602C devices provide a typical Word-  
Program time of 7 µsec. These devices use Toggle Bit,  
Data# Polling, or the RY/BY# pin to indicate the completion  
of Program operation. To protect against inadvertent write,  
they have on-chip hardware and Software Data Protection  
schemes. Designed, manufactured, and tested for a wide  
spectrum of applications, these devices are offered with a  
guaranteed typical endurance of 100,000 cycles. Data  
retention is rated at greater than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose  
Erase and Program times increase with accumulated  
Erase/Program cycles.  
To meet high density, surface mount requirements, the  
SST39VF1601C/1602C are offered in 48-lead TSOP, 48-  
ball TFBGA, and 48-ball WFBGA packages. See Figures  
2, 3, and 4 for pin assignments.  
The SST39VF1601C/1602C devices are suited for applica-  
tions that require convenient and economical updating of  
program, configuration, or data memory. For all system  
applications, they significantly improve performance and  
©2010 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71380-04-000  
1
05/10  
These specifications are subject to change without notice.  
1234567...33

中文翻译

下载PDF

SST39VF1602C-70-4I-B3KE 替代型号

型号 品牌 替代类型 描述 数据表
SST39VF1602C-70-4C-B3KE MICROCHIP

类似代替

 IC FLASH 16M PARALLEL 48TFBGA

与SST39VF1602C-70-4I-B3KE相关器件

型号 品牌 获取价格 描述 数据表
SST39VF1602C-70-4I-B3KE-T MICROCHIP

获取价格

 		IC FLASH 16M PARALLEL 48TFBGA
SST39VF1602C-70-4I-EKE SILICON

获取价格

 		Flash, 1MX16, 70ns, PDSO48, TSOP-48
SST39VF1602C-70-4I-EKE-T MICROCHIP

获取价格

 		SST39VF1602C-70-4I-EKE-T
SST39VF160-55-4C-B3K SST

获取价格

 		16 Mbit (x16) Multi-Purpose Flash
SST39VF160-55-4C-EK SST

获取价格

 		16 Mbit (x16) Multi-Purpose Flash
SST39VF160-55-4I-B3K SST

获取价格

 		16 Mbit (x16) Multi-Purpose Flash
SST39VF160-55-4I-EK SST

获取价格

 		16 Mbit (x16) Multi-Purpose Flash
SST39VF160-70-4C-B2K ETC

获取价格

 		EEPROM
SST39VF160-70-4C-B3K SST

获取价格

 		16 Mbit (x16) Multi-Purpose Flash
SST39VF160-70-4C-BK SST

获取价格

 		16 Megabit (1M x 16-Bit) Multi-Purpose Flash

与SST39VF1602C-70-4I-B3KE相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证