16 Megabit (x16) Multi-Purpose Flash
SST39LF160 / SST39VF160
DataSheet
FEATURES:
•
•
Organized as 1M x16
•
•
LatchedAddressandData
1
Single Voltage Read and Write Operations
FastEraseandWord-Program:
-
-
3.0-3.6VforSST39LF160
2.7-3.6VforSST39VF160
-
-
-
-
-
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Word-Program Time: 14 µs (typical)
ChipRewriteTime:
2
•
•
SuperiorReliability
-
-
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
15 seconds (typical) for SST39LF/VF160
Automatic Write Timing
InternalVPPGeneration
End-of-WriteDetection
3
LowPowerConsumption:
•
•
-
-
-
Active Current: 15 mA (typical)
Standby Current: 4 µA (typical)
Auto Low Power Mode: 4 µA (typical)
-
4
-
-
Toggle Bit
Data#Polling
•
•
•
Sector-EraseCapability
Uniform 2 KWord sectors
Block-EraseCapability
Uniform 32 KWord blocks
FastReadAccessTime:
-
5
•
•
CMOS I/O Compatibility
JEDECStandard
-
-
Flash EEPROM Pinouts and command sets
6
•
PackagesAvailable
-
-
55 ns for SST39LF160
70 and 90 ns for SST39VF160
-
-
48-Pin TSOP (12mm x 20mm)
48-Ball TFBGA (8mm x 10mm and 6mm x 8mm)
7
8
PRODUCTDESCRIPTION
sumed is a function of the applied voltage, current, and
timeofapplication.Sinceforanygivenvoltagerange,the
SuperFlashtechnologyuseslesscurrenttoprogramand
has a shorter erase time, the total energy consumed
during any Erase or Program operation is less than
alternative flash technologies. These devices also im-
proveflexibilitywhileloweringthecostforprogram,data,
andconfigurationstorageapplications.
The SST39LF/VF160 devices are 1M x16 CMOS Multi-
Purpose Flash (MPF) manufactured with SST’s propri-
etary, highperformanceCMOSSuperFlashtechnology.
The split-gate cell design and thick oxide tunneling
injectorattainbetterreliabilityandmanufacturabilitycom-
paredwithalternateapproaches.TheSST39LF160write
(Program or Erase) with a 3.0-3.6V power supply. The
SST39VF160 write (Program or Erase) with a 2.7-3.6V
power supply. These devices conform to JEDEC stan-
dard pinouts for x16 memories.
9
10
11
12
13
14
15
16
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of Erase/
Program cycles that have occurred. Therefore the sys-
temsoftwareorhardwaredoesnothavetobemodifiedor
de-rated as is necessary with alternative flash technolo-
gies, whose Erase and Program times increase with
accumulated Erase/Program cycles.
Featuring high performance Word-Program, the
SST39LF/VF160 devices provide a typical Word-Pro-
gram time of 14 µsec.These devices use Toggle Bit or
Data# Polling to indicate the completion of Program
operation.Toprotectagainstinadvertentwrite,theyhave
on-chip hardware and Software Data Protection
schemes.Designed,manufactured,andtestedforawide
spectrum of applications, these devices are offered with
aguaranteedenduranceof10,000cycles.Dataretention
is rated at greater than 100 years.
To meet high density, surface mount requirements, the
SST39LF/VF160areofferedin48-pinTSOPand48-ball
TFBGA packages. See Figures 1 and 2 for pinouts.
DeviceOperation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
deviceusingstandardmicroprocessorwritesequences.
AcommandiswrittenbyassertingWE#lowwhilekeeping
CE# low. The address bus is latched on the falling edge
of WE# or CE#, whichever occurs last. The data bus is
latched on the rising edge of WE# or CE#, whichever
occurs first.
TheSST39LF/VF160devicesaresuitedforapplications
that require convenient and economical updating of pro-
gram, configuration, or data memory. For all system
applications,theysignificantlyimproveperformanceand
reliability,whileloweringpowerconsumption.Theyinher-
ently use less energy during Erase and Program than
alternative flash technologies. The total energy con-
©2000SiliconStorageTechnology,Inc.
TheSSTlogoandSuperFlashareregisteredtr1ademarksofSiliconStorageTechnology,Inc.MPFisatrademarkofSiliconStorageTechnology,Inc.
399-2 11/00
S71145
Thesespecificationsaresubjecttochangewithoutnotice.
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
