8 Mbit / 16 Mbit (x16) Multi-Purpose Flash
SST39LF800 / SST39LF160 / SST39VF800 / SST39VF160
Data Sheet
FEATURES:
•
•
Organized as 512K x16 / 1M x16
•
•
Latched Address and Data
1
Single Voltage Read and Write Operations
Fast Erase and Word-Program:
-
-
3.0-3.6V for SST39LF800/160
2.7-3.6V for SST39VF800/160
-
-
-
-
-
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Word-Program Time: 14 µs (typical)
Chip Rewrite Time:
8 seconds (typical) for SST39LF/VF800
15 seconds (typical) for SST39LF/VF160
2
•
•
Superior Reliability
-
-
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
3
Low Power Consumption:
-
-
-
Active Current: 15 mA (typical)
Standby Current: 4 µA (typical)
Auto Low Power Mode: 4 µA (typical)
•
•
Automatic Write Timing
Internal VPP Generation
End-of-Write Detection
-
4
•
•
•
Sector-Erase Capability
Uniform 2 KWord sectors
Block-Erase Capability
Uniform 32 KWord blocks
Fast Read Access Time:
-
-
Toggle Bit
Data# Polling
-
5
•
•
CMOS I/O Compatibility
-
JEDEC Standard
6
-
Flash EEPROM Pinouts and command sets
-
-
55 ns for SST39LF800/160
70 and 90 ns for SST39VF800/160
•
Packages Available
-
-
-
44-Pin SOIC (500mil)
48-Pin TSOP (12mm x 20mm)
48-Ball TFBGA (8mm x 10mm)
7
8
PRODUCT DESCRIPTION
power consumption. They inherently use less energy
during Erase and Program than alternative flash tech-
nologies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase
time, the total energy consumed during any Erase or
Program operation is less than alternative flash tech-
nologies. These devices also improve flexibility while
lowering the cost for program, data, and configuration
storage applications.
The SST39LF800/160 and SST39VF800/160 devices
are 512K x16 / 1M x16 CMOS Multi-Purpose Flash
(MPF)manufacturedwithSST’sproprietary,highperfor-
mance CMOS SuperFlash technology. The split-gate
celldesignandthickoxidetunnelinginjectorattainbetter
reliabilityandmanufacturabilitycomparedwithalternate
approaches. The SST39LF800/160 write (Program or
Erase)witha3.0-3.6Vpowersupply.TheSST39VF800/
160 write (Program or Erase) with a 2.7-3.6V power
supply. These devices conform to JEDEC standard
pinouts for x16 memories.
9
10
11
12
13
14
15
16
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of Erase/
Program cycles that have occurred. Therefore the sys-
tem software or hardware does not have to be modified
or de-rated as is necessary with alternative flash tech-
nologies,whoseEraseandProgramtimesincreasewith
accumulated Erase/Program cycles.
Featuring high performance Word-Program, the
SST39LF800/160 and SST39VF800/160 devices pro-
vide a typical Word-Program time of 14 µsec.These
devices use Toggle Bit or Data# Polling to indicate the
completion of Program operation. To protect against
inadvertent write, they have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed endurance
of 10,000 cycles. Data retention is rated at greater than
100 years.
To meet high density, surface mount requirements, the
SST39LF800/160 and SST39VF800/160 are offered in
44-pin SOIC, 48-pin TSOP and 48-pin TFBGA pack-
ages. See Figures 1, 2 and 3 for pinouts.
Device Operation
The SST39LF800/160 and SST39VF800/160 devices
are suited for applications that require convenient and
economical updating of program, configuration, or data
memory. For all system applications, they significantly
improve performance and reliability, while lowering
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
deviceusingstandardmicroprocessorwritesequences.
A command is written by asserting WE# low while
© 2000 Silicon Storage Technology, Inc.The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc.
399-02 2/00
1
These specifications are subject to change without notice.
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