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SST39VF1681-70-4C-EK

更新时间： 2024-11-28 23:06:27
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SST 闪存内存集成电路光电二极管
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29页 460K
描述
16 Mbit (x8) Multi-Purpose Flash Plus

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SST39VF1681-70-4C-EK 数据手册

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16 Mbit (x8) Multi-Purpose Flash Plus  
SST39VF1681 / SST39VF1682  
SST39VF1681 / 16822.7V 16Mb (x8) MPF+ memories  
Preliminary Specifications  
FEATURES:  
•
•
Organized as 2M x8  
•
•
Security-ID Feature  
Single Voltage Read and Write Operations  
– 2.7-3.6V  
– SST: 128 bits; User: 128 bits  
Fast Read Access Time:  
•
•
Superior Reliability  
– 70 ns  
– 90 ns  
– Endurance: 100,000 Cycles (Typical)  
– Greater than 100 years Data Retention  
•
•
Latched Address and Data  
Low Power Consumption (typical values at 5 MHz)  
Fast Erase and Byte-Program:  
– Active Current: 9 mA (typical)  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode: 3 µA (typical)  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 40 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
•
Hardware Block-Protection/WP# Input Pin  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Top Block-Protection (top 64 KByte)  
for SST39VF1682  
– Bottom Block-Protection (bottom 64 KByte)  
for SST39VF1681  
– Toggle Bits  
– Data# Polling  
•
•
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Block-Erase Capability  
•
•
CMOS I/O Compatibility  
JEDEC Standard  
– Uniform 64 KByte blocks  
Chip-Erase Capability  
– Flash EEPROM Pinouts and Command sets  
Packages Available  
•
•
•
•
Erase-Suspend/Erase-Resume Capabilities  
Hardware Reset Pin (RST#)  
– 48-ball TFBGA (6mm x 8mm)  
– 48-lead TSOP (12mm x 20mm)  
PRODUCT DESCRIPTION  
The SST39VF168x devices are 2M x8 CMOS Multi-Pur-  
pose Flash Plus (MPF+) manufactured with SST’s propri-  
etary, high performance CMOS SuperFlash technology.  
The split-gate cell design and thick-oxide tunneling injec-  
tor attain better reliability and manufacturability compared  
with alternate approaches. The SST39VF168x write (Pro-  
gram or Erase) with a 2.7-3.6V power supply. These  
devices conform to JEDEC standard pinouts for x8 mem-  
ories.  
they significantly improve performance and reliability, while  
lowering power consumption. They inherently use less  
energy during Erase and Program than alternative flash  
technologies. The total energy consumed is a function of  
the applied voltage, current, and time of application. Since  
for any given voltage range, the SuperFlash technology  
uses less current to program and has a shorter erase time,  
the total energy consumed during any Erase or Program  
operation is less than alternative flash technologies. These  
devices also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
Featuring high performance Byte-Program, the  
SST39VF168x devices provide a typical Byte-Program  
time of 7 µsec. These devices use Toggle Bit or Data# Poll-  
ing to indicate the completion of Program operation. To pro-  
tect against inadvertent write, they have on-chip hardware  
and Software Data Protection schemes. Designed, manu-  
factured, and tested for a wide spectrum of applications,  
these devices are offered with a guaranteed typical endur-  
ance of 100,000 cycles. Data retention is rated at greater  
than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose  
Erase and Program times increase with accumulated  
Erase/Program cycles.  
To meet high density, surface mount requirements, the  
SST39VF168x are offered in both 48-ball TFBGA and  
48-lead TSOP packages. See Figures 1 and 2 for pin  
assignments.  
The SST39VF168x devices are suited for applications that  
require convenient and economical updating of program,  
configuration, or data memory. For all system applications,  
©2003 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71243-03-000  
1
11/03  
These specifications are subject to change without notice.  
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与SST39VF1681-70-4C-EK相关器件

型号 品牌 获取价格 描述 数据表
SST39VF1681-70-4C-EKE SST

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 		16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4C-EKE MICROCHIP

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 		2M X 8 FLASH 2.7V PROM, 70 ns, PDSO48, 12 X 20 MM, LEAD FREE, MO-142DD, TSOP1-48
SST39VF1681-70-4I-B3K SST

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 		16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4I-B3KE SST

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 		16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4I-B3KE MICROCHIP

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 		2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-210AB-1, TFB
SST39VF1681-70-4I-EK SST

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 		16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4I-EKE SST

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 		16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4I-EKE MICROCHIP

获取价格

 		2M X 8 FLASH 2.7V PROM, 70 ns, PDSO48, 12 X 20 MM, LEAD FREE, MO-142DD, TSOP1-48
SST39VF1681-70-4I-EKE-T MICROCHIP

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 		SST39VF1681-70-4I-EKE-T
SST39VF1681-90-4C-EKE MICROCHIP

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 		2M X 8 FLASH 2.7V PROM, 90 ns, PDSO48, 12 X 20 MM, MO-142DD, TSOP1-48

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