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SST39VF1681-70-4I-EKE-T PDF预览

SST39VF1681-70-4I-EKE-T

更新时间: 2024-11-29 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 光电二极管内存集成电路闪存
页数 文件大小 规格书
34页 460K
描述
SST39VF1681-70-4I-EKE-T

SST39VF1681-70-4I-EKE-T 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:5 weeks
风险等级:5.6Is Samacsys:N
最长访问时间:70 ns启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e3内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:8
部门数/规模:512端子数量:48
字数:2097152 words字数代码:2000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:4K最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.035 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPEBase Number Matches:1

SST39VF1681-70-4I-EKE-T 数据手册

 浏览型号SST39VF1681-70-4I-EKE-T的Datasheet PDF文件第2页浏览型号SST39VF1681-70-4I-EKE-T的Datasheet PDF文件第3页浏览型号SST39VF1681-70-4I-EKE-T的Datasheet PDF文件第4页浏览型号SST39VF1681-70-4I-EKE-T的Datasheet PDF文件第5页浏览型号SST39VF1681-70-4I-EKE-T的Datasheet PDF文件第6页浏览型号SST39VF1681-70-4I-EKE-T的Datasheet PDF文件第7页 
16 Mbit (x8) Multi-Purpose Flash Plus  
SST39VF1681 / SST39VF1682  
A Microchip Technology Company  
Data Sheet  
The SST39VF1681 / SST39VF1682 are 2M x8 CMOS Multi-Purpose Flash Plus  
(MPF+) manufactured with SST proprietary, high performance CMOS Super-  
Flash® technology. The split-gate cell design and thick-oxide tunneling injector  
attain better reliability and manufacturability compared with alternate approaches.  
The SST39VF1681 / SST39VF1682 write (Program or Erase) with a 2.7-3.6V  
power supply. These devices conforms to JEDEC standard pinouts for x8 memo-  
ries.  
Features  
• Organized as 2M x8  
• Security-ID Feature  
– SST: 128 bits; User: 128 bits  
• Single Voltage Read and Write Operations  
• Fast Read Access Time:  
– 2.7-3.6V  
– 70 ns  
• Superior Reliability  
• Latched Address and Data  
– Endurance: 100,000 Cycles (Typical)  
– Greater than 100 years Data Retention  
• Fast Erase and Byte-Program:  
• Low Power Consumption (typical values at 5 MHz)  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 40 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
– Active Current: 9 mA (typical)  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode: 3 µA (typical)  
• Hardware Block-Protection/WP# Input Pin  
• Automatic Write Timing  
– Top Block-Protection (top 64 KByte)  
– Internal VPP Generation  
for SST39VF1682  
• End-of-Write Detection  
– Bottom Block-Protection (bottom 64 KByte)  
for SST39VF1681  
– Toggle Bits  
– Data# Polling  
• Sector-Erase Capability  
• CMOS I/O Compatibility  
– Uniform 4 KByte sectors  
• Block-Erase Capability  
• JEDEC Standard  
– Uniform 64 KByte blocks  
– Flash EEPROM Pinouts and Command sets  
• Chip-Erase Capability  
• Packages Available  
– 48-ball TFBGA (6mm x 8mm)  
• Erase-Suspend/Erase-Resume Capabilities  
• Hardware Reset Pin (RST#)  
– 48-lead TSOP (12mm x 20mm)  
• All devices are RoHS compliant  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25040A  
05/11  

SST39VF1681-70-4I-EKE-T 替代型号

型号 品牌 替代类型 描述 数据表
SST39VF1681-70-4I-EKE MICROCHIP

完全替代

2M X 8 FLASH 2.7V PROM, 70 ns, PDSO48, 12 X 20 MM, LEAD FREE, MO-142DD, TSOP1-48

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SST39VF1682-70-4C-EKE SST

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