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SST39VF160Q-90-4C-BK

更新时间： 2024-11-29 20:27:19
品牌 Logo 应用领域
芯科 - SILICON 内存集成电路闪存
页数 文件大小 规格书
23页 248K
描述
Flash, 1MX16, 90ns, PBGA48

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SST39VF160Q-90-4C-BK 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FBGA, BGA48,6X8,32Reach Compliance Code：unknown
风险等级：5.92Is Samacsys：N
最长访问时间：90 ns命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48JESD-609代码：e0
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16部门数/规模：512
端子数量：48字数：1048576 words
字数代码：1000000最高工作温度：70 °C
最低工作温度：组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA48,6X8,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, FINE PITCH并行/串行：PARALLEL
电源：3/3.3,5 V认证状态：Not Qualified
部门规模：2K最大待机电流：0.00001 A
子类别：Flash Memories最大压摆率：0.025 mA
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPEBase Number Matches：1

SST39VF160Q-90-4C-BK 数据手册

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16 Megabit (1M x 16-Bit) Multi-Purpose Flash  
SST39VF160Q / SST39VF160  
Advance Information  
FEATURES:  
•
•
•
Organized as 1 M X 16  
•
•
Latched Address and Data  
Fast Sector Erase and Word Program:  
1
Single 2.7V-only Read and Write Operations  
-
-
-
-
-
Sector Erase Time: 3 ms typical  
Block Erase Time: 7 ms typical  
Chip Erase Time: 15 ms typical  
Word Program time: 7 µs typical  
Chip Rewrite Time: 7 seconds  
V
DDQ Power Supply to Support 5V I/O  
for SST39VF160Q  
2
- VDDQ not available on SST39VF160  
Superior Reliability  
•
•
-
-
Endurance: 100,000 Cycles (typical)  
Greater than 100 years Data Retention  
3
•
•
Automatic Write Timing  
- Internal Vpp Generation  
End of Write Detection  
Low Power Consumption:  
4
-
-
-
Active Current: 15 mA (typical)  
Standby Current: 3 µA (typical)  
Auto Low Power Mode: 3 µA (typical)  
-
-
Toggle Bit  
Data# Polling  
•
•
CMOS I/O Compatibility  
•
•
•
Small Sector Erase Capability (512 sectors)  
Uniform 2 KWord sectors  
Block Erase Capability (32 blocks)  
Uniform 32 KWord blocks  
Fast Read Access Time:  
70 and 90 ns  
5
JEDEC Standard  
-
-
EEPROM Pinouts and command set  
6
•
Packages Available  
-
-
-
48-Pin TSOP (12mm x 20mm)  
6 x 8 Ball TFBGA  
-
7
PRODUCT DESCRIPTION  
alternative flash technologies. The total energy con-  
sumed is a function of the applied voltage, current, and  
timeofapplication.Sinceforanygivenvoltagerange,the  
SuperFlashtechnologyuseslesscurrenttoprogramand  
has a shorter erase time, the total energy consumed  
during any Erase or Program operation is less than  
alternative flash technologies. The SST39VF160Q/  
VF160 also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
The SST39VF160Q/VF160 devices are 1M x 16 CMOS  
Multi-Purpose Flash (MPF) manufactured with SST’s  
proprietary, high performance CMOS SuperFlash tech-  
nology. The split-gate cell design and thick oxide tunnel-  
ing injector attain better reliability and manufacturability  
compared with alternate approaches. The  
SST39VF160Q/VF160 write (Program or Erase) with a  
2.7V-only power supply. The SST39VF160Q/VF160  
conform to JEDEC standard pinouts for x16 memories.  
8
9
10  
11  
12  
13  
14  
15  
16  
The SuperFlash technology provides fixed Erase and  
Programtimes,independentofthenumberofendurance  
cycles that have occurred. Therefore the system  
software or hardware does not have to be modified or  
de-rated as is necessary with alternative flash technolo-  
gies, whose erase and program times increase with  
accumulated endurance cycles.  
Featuring high performance word program, the  
SST39VF160Q/VF160 devices provide a maximum  
word-program time of 10 µsec. The entire memory can  
typically be erased and programmed word by word in 7  
seconds, when using interface features such as Toggle  
BitorData#PollingtoindicatethecompletionofProgram  
operation. To protect against inadvertent write, the  
SST39VF160Q/VF160haveon-chiphardwareandsoft-  
ware data protection schemes. Designed, manufac-  
tured,andtestedforawidespectrumofapplications,the  
SST39VF160Q/VF160 are offered with a guaranteed  
endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39VF160Q/VF160 are offered in 48-pin TSOP and  
48-pin TFBGA packages. See Figures 1 and 2 for  
pinouts.  
Device Operation  
Commands are used to initiate the memory operation  
functions of the device. Commands are written to the  
deviceusingstandardmicroprocessorwritesequences.  
A command is written by asserting WE# low while  
keeping CE# low. The address bus is latched on the  
falling edge of WE# or CE#, whichever occurs last. The  
data bus is latched on the rising edge of WE# or CE#,  
whichever occurs first.  
The SST39VF160Q/VF160 devices are suited for appli-  
cationsthatrequireconvenientandeconomicalupdating  
of program, configuration, or data memory. For all sys-  
tem applications, the SST39VF160Q/VF160 signifi-  
cantly improve performance and reliability, while lower-  
ing power consumption. The SST39VF160Q/VF160 in-  
herently use less energy during Ease and Program than  
© 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon storage Technology, Inc.  
329-09 11/98 These specifications are subject to change without notice.  
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与SST39VF160Q-90-4C-BK相关器件

型号 品牌 获取价格 描述 数据表
SST39VF160Q-90-4C-EK SST

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 		16 Megabit (1M x 16-Bit) Multi-Purpose Flash
SST39VF160Q-90-4C-EK SILICON

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 		Flash, 1MX16, 90ns, PDSO48
SST39VF160Q-90-4C-U1 SST

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 		16 Megabit (1M x 16-Bit) Multi-Purpose Flash
SST39VF160Q-90-4I-BK SST

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 		16 Megabit (1M x 16-Bit) Multi-Purpose Flash
SST39VF160Q-90-4I-BK SILICON

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 		Flash, 1MX16, 90ns, PBGA48
SST39VF160Q-90-4I-EK SST

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 		16 Megabit (1M x 16-Bit) Multi-Purpose Flash
SST39VF160Q-90-4I-EK SILICON

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 		Flash, 1MX16, 90ns, PDSO48
SST39VF1661-70-4C-EKE SILICON

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 		2M X 8 FLASH 2.7V PROM, 70 ns, PDSO48, 12 X 20 MM, MO-142DD, TSOP1-48
SST39VF1661-90-4I-EKE SILICON

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 		Flash, 2MX8, 90ns, PDSO48, 12 X 20 MM, MO-142DD, TSOP1-48
SST39VF1662-90-4C-EKE SILICON

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 		2M X 8 FLASH 2.7V PROM, 90 ns, PDSO48, 12 X 20 MM, MO-142DD, TSOP1-48

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