5秒后页面跳转
SST39VF1661-90-4I-EKE PDF预览

SST39VF1661-90-4I-EKE

更新时间: 2024-11-29 14:44:59
品牌 Logo 应用领域
芯科 - SILICON 光电二极管内存集成电路
页数 文件大小 规格书
28页 748K
描述
Flash, 2MX8, 90ns, PDSO48, 12 X 20 MM, MO-142DD, TSOP1-48

SST39VF1661-90-4I-EKE 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP1包装说明:12 X 20 MM, MO-142DD, TSOP1-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.52最长访问时间:90 ns
启动块:BOTTOMJESD-30 代码:R-PDSO-G48
JESD-609代码:e3长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:12 mmBase Number Matches:1

SST39VF1661-90-4I-EKE 数据手册

 浏览型号SST39VF1661-90-4I-EKE的Datasheet PDF文件第2页浏览型号SST39VF1661-90-4I-EKE的Datasheet PDF文件第3页浏览型号SST39VF1661-90-4I-EKE的Datasheet PDF文件第4页浏览型号SST39VF1661-90-4I-EKE的Datasheet PDF文件第5页浏览型号SST39VF1661-90-4I-EKE的Datasheet PDF文件第6页浏览型号SST39VF1661-90-4I-EKE的Datasheet PDF文件第7页 
16 Mbit (x8) Multi-Purpose Flash Plus  
SST39VF1661 / SST39VF1662  
SST39VF166x16Mb (x8) MPF Plus  
Preliminary Specifications  
FEATURES:  
Organized as 2M x8: SST39VF1661/1662  
Single Voltage Read and Write Operations  
– 2.7-3.6V  
Security-ID Feature  
– SST: 128 bits; User: 128 bits  
Fast Read Access Time:  
Superior Reliability  
– Endurance: 100,000 Cycles (Typical)  
– Greater than 100 years Data Retention  
– 70 ns  
– 90 ns  
Latched Address and Data  
Fast Erase and Byte-Program:  
Low Power Consumption (typical values at 5 MHz)  
– Active Current: 9 mA (typical)  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode: 3 µA (typical)  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 40 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
Hardware Block-Protection/WP# Input Pin  
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
Toggle Bits  
– Data# Polling  
Top Block-Protection (top 64 KByte)  
for SST39VF1662  
– Bottom Block-Protection (bottom 64 KByte)  
for SST39VF1661  
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Block-Erase Capability  
CMOS I/O Compatibility  
JEDEC Standard  
– Uniform 64 KByte blocks  
Chip-Erase Capability  
Erase-Suspend/Erase-Resume Capabilities  
Hardware Reset Pin (RST#)  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 48-lead TSOP (12mm x 20mm)  
PRODUCT DESCRIPTION  
The SST39VF166x devices are 2M x8 CMOS Multi-Pur-  
pose Flash Plus (MPF+) manufactured with SST’s propri-  
etary, high performance CMOS SuperFlash technology.  
The split-gate cell design and thick-oxide tunneling injec-  
tor attain better reliability and manufacturability compared  
with alternate approaches. The SST39VF166x write (Pro-  
gram or Erase) with a 2.7-3.6V power supply. These  
devices conform to JEDEC standard pinouts for x8 mem-  
ories.  
The SST39VF166x devices are suited for applications that  
require convenient and economical updating of program,  
configuration, or data memory. For all system applications,  
they significantly improve performance and reliability, while  
lowering power consumption. They inherently use less  
energy during Erase and Program than alternative flash  
technologies. The total energy consumed is a function of  
the applied voltage, current, and time of application. Since  
for any given voltage range, the SuperFlash technology  
uses less current to program and has a shorter erase time,  
the total energy consumed during any Erase or Program  
operation is less than alternative flash technologies. These  
devices also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
Featuring high performance Byte-Program, the  
SST39VF166x devices provide a typical Byte-Program  
time of 7 µsec. These devices use Toggle Bit or Data# Poll-  
ing to indicate the completion of Program operation. To pro-  
tect against inadvertent write, they have on-chip hardware  
and Software Data Protection schemes. Designed, manu-  
factured, and tested for a wide spectrum of applications,  
these devices are offered with a guaranteed typical endur-  
ance of 100,000 cycles. Data retention is rated at greater  
than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose  
Erase and Program times increase with accumulated  
Erase/Program cycles.  
©2003 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71243-00-000  
1
7/03  
These specifications are subject to change without notice.  

与SST39VF1661-90-4I-EKE相关器件

型号 品牌 获取价格 描述 数据表
SST39VF1662-90-4C-EKE SILICON

获取价格

2M X 8 FLASH 2.7V PROM, 90 ns, PDSO48, 12 X 20 MM, MO-142DD, TSOP1-48
SST39VF1681 SST

获取价格

16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681 MICROCHIP

获取价格

The SST39VF1681 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST prop
SST39VF1681_11 SST

获取价格

16 Mbit (x8) Multi-Purpose Flash Plus Active Current: 9 mA (typical)
SST39VF1681-70-4C-B3K SST

获取价格

16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4C-B3KE SST

获取价格

16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4C-B3KE MICROCHIP

获取价格

2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-210AB-1, TFB
SST39VF1681-70-4C-EK SST

获取价格

16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4C-EKE SST

获取价格

16 Mbit (x8) Multi-Purpose Flash Plus
SST39VF1681-70-4C-EKE MICROCHIP

获取价格

2M X 8 FLASH 2.7V PROM, 70 ns, PDSO48, 12 X 20 MM, LEAD FREE, MO-142DD, TSOP1-48