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SST39VF1602C-70-4I-B3KE PDF预览

SST39VF1602C-70-4I-B3KE

更新时间: 2024-11-29 15:52:55
品牌 Logo 应用领域
芯科 - SILICON 内存集成电路闪存
页数 文件大小 规格书
33页 901K
描述
Flash, 1MX16, 70ns, PBGA48, TFBGA-48

SST39VF1602C-70-4I-B3KE 技术参数

生命周期:Transferred零件包装代码:BGA
包装说明:TFBGA-48针数:48
Reach Compliance Code:unknown风险等级:5.38
最长访问时间:70 nsJESD-30 代码:R-PBGA-B48
长度:8 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:6 mm
Base Number Matches:1

SST39VF1602C-70-4I-B3KE 数据手册

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16 Mbit (x16) Multi-Purpose Flash Plus  
SST39VF1601C / SST39VF1602C  
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories  
Data Sheet  
FEATURES:  
Organized as 1M x16: SST39VF1601C/1602C  
Single Voltage Read and Write Operations  
– 2.7-3.6V  
Security-ID Feature  
– SST: 128 bits; User: 128 words  
Fast Read Access Time:  
– 70 ns  
Superior Reliability  
– Endurance: 100,000 Cycles (Typical)  
– Greater than 100 years Data Retention  
Fast Erase and Word-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 40 ms (typical)  
– Word-Program Time: 7 µs (typical)  
Low Power Consumption (typical values at 5 MHz)  
– Active Current: 9 mA (typical)  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode: 3 µA (typical)  
Hardware Block-Protection/WP# Input Pin  
Top Block-Protection (top 8 KWord)  
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Bottom Block-Protection (bottom 8 KWord)  
Toggle Bits  
Sector-Erase Capability  
– Uniform 2 KWord sectors  
Block-Erase Capability  
– Flexible block architecture; one 8-, two 4-, one  
16-, and thirty one 32-KWord blocks  
– Data# Polling  
– Ready/Busy# Pin  
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Chip-Erase Capability  
Packages Available  
Erase-Suspend/Erase-Resume Capabilities  
Hardware Reset Pin (RST#)  
Latched Address and Data  
– 48-lead TSOP (12mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm)  
– 48-ball WFBGA (4mm x 6mm)  
All devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST39VF1601C and SST39VF1602C devices are  
1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manu-  
factured with SST proprietary, high performance CMOS  
SuperFlash technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
The SST39VF160xC writes (Program or Erase) with a  
2.7-3.6V power supply. These devices conform to JEDEC  
standard pinouts for x16 memories.  
reliability, while lowering power consumption. They inher-  
ently use less energy during Erase and Program than alter-  
native flash technologies. The total energy consumed is a  
function of the applied voltage, current, and time of applica-  
tion. Since for any given voltage range, the SuperFlash  
technology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase or  
Program operation is less than alternative flash technolo-  
gies. These devices also improve flexibility while lowering  
the cost for program, data, and configuration storage appli-  
cations.  
Featuring high performance Word-Program, the  
SST39VF1601C/1602C devices provide a typical Word-  
Program time of 7 µsec. These devices use Toggle Bit,  
Data# Polling, or the RY/BY# pin to indicate the completion  
of Program operation. To protect against inadvertent write,  
they have on-chip hardware and Software Data Protection  
schemes. Designed, manufactured, and tested for a wide  
spectrum of applications, these devices are offered with a  
guaranteed typical endurance of 100,000 cycles. Data  
retention is rated at greater than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose  
Erase and Program times increase with accumulated  
Erase/Program cycles.  
To meet high density, surface mount requirements, the  
SST39VF1601C/1602C are offered in 48-lead TSOP, 48-  
ball TFBGA, and 48-ball WFBGA packages. See Figures  
2, 3, and 4 for pin assignments.  
The SST39VF1601C/1602C devices are suited for applica-  
tions that require convenient and economical updating of  
program, configuration, or data memory. For all system  
applications, they significantly improve performance and  
©2010 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71380-04-000  
1
05/10  
These specifications are subject to change without notice.  

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