Datasheet > SST26VF064B_15

SST26VF064B_15

更新时间： 2024-11-08 00:41:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
85页	3119K
描述
2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory

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SST26VF064B_15 数据手册

SST26VF064B / SST26VF064BA

2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory

• Security ID

Features

- One-Time Programmable (OTP) 2 KByte, Secure ID

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

• Single Voltage Read and Write Operations

- 2.7-3.6V or 2.3-3.6V

• Serial Interface Architecture

• Temperature Range

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- Industrial: -40°C to +85°C

- Extended: -40°C to +105°C

- Mode 0 and Mode 3

• Packages Available

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High Speed Clock Frequency

- 8-contact WDFN (6mm x 5mm)

- 8-contact WDFN (6mm x 8 mm)

- 8-lead SOIJ (5.28 mm)

- 16-lead SOIC (7.50 mm)

- 24-ball TBGA (6mm x 8mm)

- 2.7-3.6V: 104 MHz max

- 2.3-3.6V: 80 MHz max

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• All devices are RoHS compliant

• Superior Reliability

Product Description

- Endurance: 100,000 Cycles (min)

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26VF064B/064BA also

support full command-set compatibility to traditional

Serial Peripheral Interface (SPI) protocol. System

designs using SQI flash devices occupy less board

space and ultimately lower system costs.

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 µA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

• Page-Program

All members of the 26 Series, SQI family are manufac-

tured with proprietary, high-performance CMOS Super-

Flash® technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and man-

ufacturability compared with alternate approaches.

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

SST26VF064B/064BA significantly improve perfor-

mance and reliability, while lowering power consump-

tion. These devices write (Program or Erase) with a

single power supply of 2.3-3.6V. The total energy con-

sumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range,

the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy

consumed during any Erase or Program operation is

less than alternative flash memory technologies.

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter

overlay blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Protection

SST26VF064B/064BA are offered in 8-contact WDFN

(6 mm x 5 mm or 6mm x 8mm), 8-lead SOIJ (5.28 mm),

16-lead SOIC (7.50 mm), and 24-ball TBGA. See Fig-

ure 2-2 for pin assignments.

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

Two configurations are available upon order.

SST26VF064B default at power-up has the WP# and

HOLD# pins enabled, and the SIO2 and SIO3 pins dis-

- Read Protection on top and bottom 8 KByte

parameter blocks

abled,

initiate

SPI-protocol

operations.

 2015 Microchip Technology Inc.

DS20005119G-page 1

12 3 4 5 6 7...85

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与SST26VF064B_15相关器件

型号	品牌	获取价格	描述	数据表
SST26VF064B-104-5I-MF	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104-5I-SM	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104-5I-SO	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104-5I-TD	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104I/MF	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104I/MN	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104I/SM	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104I/SO	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104I/TD	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104V/MF	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory

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