Datasheet > SST26VF064B-104V/SM

SST26VF064B-104V/SM

更新时间： 2024-11-08 00:41:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		时钟光电二极管内存集成电路
页数	文件大小	规格书
85页	3119K
描述
2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory

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SST26VF064B-104V/SM 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SOIJ-8	Reach Compliance Code：	compliant
Factory Lead Time：	9 weeks	风险等级：	1.13
Samacsys Description：	NOR Flash 64Mbit SPI/SQI Flash 2.3V-3.6V, 105C	最大时钟频率 (fCLK)：	104 MHz
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
长度：	5.26 mm	内存密度：	67108864 bit
内存集成电路类型：	FLASH	内存宽度：	1
湿度敏感等级：	3	功能数量：	1
端子数量：	8	字数：	67108864 words
字数代码：	64000000	工作模式：	SYNCHRONOUS
最高工作温度：	105 °C	最低工作温度：	-40 °C
组织：	64MX1	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260	编程电压：	3 V
座面最大高度：	2.03 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Matte Tin (Sn) - annealed
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	5.25 mm	Base Number Matches：	1

SST26VF064B-104V/SM 数据手册

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SST26VF064B / SST26VF064BA

2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory

• Security ID

Features

- One-Time Programmable (OTP) 2 KByte, Secure ID

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

• Single Voltage Read and Write Operations

- 2.7-3.6V or 2.3-3.6V

• Serial Interface Architecture

• Temperature Range

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- Industrial: -40°C to +85°C

- Extended: -40°C to +105°C

- Mode 0 and Mode 3

• Packages Available

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High Speed Clock Frequency

- 8-contact WDFN (6mm x 5mm)

- 8-contact WDFN (6mm x 8 mm)

- 8-lead SOIJ (5.28 mm)

- 16-lead SOIC (7.50 mm)

- 24-ball TBGA (6mm x 8mm)

- 2.7-3.6V: 104 MHz max

- 2.3-3.6V: 80 MHz max

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• All devices are RoHS compliant

• Superior Reliability

Product Description

- Endurance: 100,000 Cycles (min)

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26VF064B/064BA also

support full command-set compatibility to traditional

Serial Peripheral Interface (SPI) protocol. System

designs using SQI flash devices occupy less board

space and ultimately lower system costs.

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 µA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

• Page-Program

All members of the 26 Series, SQI family are manufac-

tured with proprietary, high-performance CMOS Super-

Flash® technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and man-

ufacturability compared with alternate approaches.

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

SST26VF064B/064BA significantly improve perfor-

mance and reliability, while lowering power consump-

tion. These devices write (Program or Erase) with a

single power supply of 2.3-3.6V. The total energy con-

sumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range,

the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy

consumed during any Erase or Program operation is

less than alternative flash memory technologies.

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter

overlay blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Protection

SST26VF064B/064BA are offered in 8-contact WDFN

(6 mm x 5 mm or 6mm x 8mm), 8-lead SOIJ (5.28 mm),

16-lead SOIC (7.50 mm), and 24-ball TBGA. See Fig-

ure 2-2 for pin assignments.

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

Two configurations are available upon order.

SST26VF064B default at power-up has the WP# and

HOLD# pins enabled, and the SIO2 and SIO3 pins dis-

- Read Protection on top and bottom 8 KByte

parameter blocks

abled,

initiate

SPI-protocol

operations.

 2015 Microchip Technology Inc.

DS20005119G-page 1

12 3 4 5 6 7...85

中文翻译

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SST26VF064B-104V/SM 替代型号

型号	品牌	替代类型	描述	数据表
SST26VF064BT-104V/SM	MICROCHIP	完全替代	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064B-104I/SM	MICROCHIP	功能相似	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory

与SST26VF064B-104V/SM相关器件

型号	品牌	获取价格	描述	数据表
SST26VF064B-104V/SO	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064BA	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064BA-104-5I-MF	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064BA-104-5I-SM	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064BA-104-5I-SO	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064BA-104-5I-TD	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory
SST26VF064BA-104I/MF	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064BA-104I/SM	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064BA-104I/SO	MICROCHIP	获取价格	2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF064BAT-104-5I-MF	MICROCHIP	获取价格	3.0V Serial Quad I/O (SQI) Flash Memory

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