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SST26VF064B-104-5I-SO

更新时间： 2024-11-07 12:01:55
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美国微芯 - MICROCHIP /
页数 文件大小 规格书
76页 1135K
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3.0V Serial Quad I/O (SQI) Flash Memory

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SST26VF064B / SST26VF064BA  
3.0V Serial Quad I/O (SQI) Flash Memory  
• Temperature Range  
Features  
- Industrial: -40°C to +85°C  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
• Packages Available  
- 8-contact WSON (6mm x 5mm)  
- 8-lead SOIC (200 mil)  
- 16-lead SOIC (300 mil)  
• Serial Interface Architecture  
- Nibble-wide multiplexed I/O’s with SPI-like serial  
command structure  
- 24-ball TBGA (6mm x 8mm)  
- Mode 0 and Mode 3  
• All devices are RoHS compliant  
- x1/x2/x4 Serial Peripheral Interface (SPI) Proto-  
col  
Product Description  
• High Speed Clock Frequency  
- 104 MHz max  
The Serial Quad I/O™ (SQI™) family of flash-memory  
devices features a six-wire, 4-bit I/O interface that  
allows for low-power, high-performance operation in a  
low pin-count package. SST26VF064B/064BA also  
support full command-set compatibility to traditional  
Serial Peripheral Interface (SPI) protocol. System  
designs using SQI flash devices occupy less board  
space and ultimately lower system costs.  
• Burst Modes  
- Continuous linear burst  
- 8/16/32/64 Byte linear burst with wrap-around  
• Superior Reliability  
- Endurance: 100,000 Cycles (min)  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
All members of the 26 Series, SQI family are manufac-  
tured with proprietary, high-performance CMOS Super-  
Flash® technology. The split-gate cell design and thick-  
oxide tunneling injector attain better reliability and man-  
ufacturability compared with alternate approaches.  
- Active Read current: 15 mA (typical @ 104 MHz)  
- Standby Current: 15 µA (typical)  
• Page-Program  
- 256 Bytes per page in x1 or x4 mode  
• End-of-Write Detection  
The SST26VF064B/064BA significantly improve per-  
formance and reliability, while lowering power con-  
sumption. These devices write (Program or Erase) with  
a single power supply of 2.7-3.6V. The total energy  
consumed is a function of the applied voltage, current,  
and time of application. Since for any given voltage  
range, the SuperFlash technology uses less current to  
program and has a shorter erase time, the total energy  
consumed during any Erase or Program operation is  
less than alternative flash memory technologies.  
- Software polling the BUSY bit in status register  
• Flexible Erase Capability  
- Uniform 4 KByte sectors  
- Four 8 KByte top and bottom parameter overlay  
blocks  
- One 32 KByte top and bottom overlay block  
- Uniform 64 KByte overlay blocks  
• Write-Suspend  
SST26VF064B/064BA are offered in 8-contact WSON  
(6 mm x 5 mm), 8-lead SOIC (200 mil), 16-lead SOIC  
(300 mil), and 24-ball TBGA. See Figure 2-2 for pin  
assignments.  
- Suspend Program or Erase operation to access  
another block/sector  
• Software Reset (RST) mode  
• Software Write Protection  
- Individual Block-Locking  
Two configurations are available upon order:  
SST26VF064B default at power-up has the WP# and  
Hold# pins enabled and SST26VF064BA default at  
power-up has the WP# and Hold# pins disabled.  
- 64 KByte blocks, two 32 KByte blocks, and  
eight 8 KByte parameter blocks  
• Security ID  
- One-Time Programmable (OTP) 2 KByte,  
Secure ID  
- 64 bit unique, factory pre-programmed  
identifier  
- User-programmable area  
2013 Microchip Technology Inc.  
Advance Information  
DS25119C-page 1  
1234567...76

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