是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220F | 包装说明: | TO-220F, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.87 |
雪崩能效等级(Eas): | 650 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 20 A | 最大漏极电流 (ID): | 35 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 57 W |
最大脉冲漏极电流 (IDM): | 140 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSS45N20B_FP001 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Me |
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SSS4N55 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 550V, 3ohm, 1-Element, N-Channel, Silicon, Metal |
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SSS4N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET |
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SSS4N60 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal |
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SSS4N60AS | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |
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SSS4N60B | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET |
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SSS4N70 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 700V, 3.5ohm, 1-Element, N-Channel, Silicon, Met |
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SSS4N80 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.3A I(D) | SOT-186 |
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SSS4N80A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.5A I(D) | TO-220F |
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SSS4N80AS | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |
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