型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S-SS58B | LEIDITECH |
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Schottky diode for automotive applications | |
SSS5N60A | FAIRCHILD |
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Advanced Power MOSFET | |
SSS5N70 | SAMSUNG |
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Power Field-Effect Transistor, 2.7A I(D), 700V, 2.5ohm, 1-Element, N-Channel, Silicon, Met | |
SSS5N80 | SAMSUNG |
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Power Field-Effect Transistor, 2.7A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Met | |
SSS5N80A | FAIRCHILD |
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Advanced Power MOSFET | |
SSS5N90 | SAMSUNG |
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Power Field-Effect Transistor, 2.8A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Met | |
SSS5N90A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-220F | |
SSS-60MD | SHINMEI |
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Body height 1.6mm, Compact-sized Surface-mounting Type Rotary-Switches | |
SSS-60MD-10A-1-T20 | SHINMEI |
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Body height 1.6mm, Compact-sized Surface-mounting Type Rotary-Switches | |
SSS-60MD-12A-1-T20 | SHINMEI |
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Body height 1.6mm, Compact-sized Surface-mounting Type Rotary-Switches |