Datasheet > SSO-AD-1100-TO5I

SSO-AD-1100-TO5I

更新时间： 2024-10-26 06:14:23

品牌	Logo	应用领域
ROITHNER		光电二极管光电二极管
页数	文件大小	规格书
2页	57K
描述
Avalanche Photodiode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SSO-AD-1100-TO5I 数据手册

SSO-AD-1100-TO5i

Avalanche Photodiode

Special characteristics

High gain at low bias voltage

Fast rise time

1130 µm diameter active area

low capacitance

Parameters:

Package 3 (TO5i) :

active area

1,0 mm²

1130m

dark current ¹⁾

(M=100)

max. 6 nA

Total capacitance ¹⁾

(M=100)

typ.10 pF

Break down U_BR

(at I_D=2µA)

typ. 160 V

Temperature coefficient of U_BR

typ. 0,4 %/°C

typ. 0,45 A/W

typ. 0,35 GHz

typ. 1 ns

Spectral responsivity

at 780 nm

Cut-off frequency

(-3dB)

Rise time

Optimum gain

Gain M

40 – 60

typ. 100

"Exess Noise" factor

(M=100)

typ. 2,2

typ. 0,2

"Exess Noise" index

(M=100)

N.E.P.

(M=100, 880 nm)

Operating temperature

Storage temperature

typ. 8 * 10^-14W/Hz

-20 ... +70°C

-60 ... +100°C

1) measurement conditions:

Setup of photo current 10nA at M=1 and irradiation by a

NIR-LED (880nm, 80nm bandwidth).

Rise of the photo current up to 1 µA, (M=100) by internal

multiplication due to an increasing bias voltage.

2) limited U_BRrange possible to agree

中文翻译

下载PDF

与SSO-AD-1100-TO5I相关器件

型号	品牌	获取价格	描述	数据表
SSO-AD-1900-TO5I	ROITHNER	获取价格	Avalanche Photodiode
SSO-AD-230NIR-TO52	ROITHNER	获取价格	Avalanche Photodiode NIR
SSO-AD-230NIR-TO52-S1	ROITHNER	获取价格	Avalanche Photodiode NIR
SSO-AD-230-TO52	ROITHNER	获取价格	Avalanche Photodiode
SSO-AD-230-TO52I	ROITHNER	获取价格	Avalanche Photodiode
SSO-AD-230-TO52NF	ROITHNER	获取价格	Avalanche Photodiode
SSO-AD-230-TO52-S1	ROITHNER	获取价格	Avalanche Photodiode
SSO-AD-2500-TO5I	ROITHNER	获取价格	Avalanche Photodiode
SSO-AD-500NIR-TO52	ROITHNER	获取价格	Avalanche Photodiode NIR
SSO-AD-500NIR-TO52-S1	ROITHNER	获取价格	Avalanche Photodiode NIR