Datasheet > SSO-AD-500-TO52I

SSO-AD-500-TO52I

更新时间： 2024-10-26 09:04:43

品牌	Logo	应用领域
ROITHNER		光电二极管光电二极管
页数	文件大小	规格书
2页	53K
描述
Avalanche Photodiode

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中文翻译

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数据手册

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SSO-AD-500-TO52I 数据手册

SSO-AD-500-TO52i

Avalanche Photodiode

Special characteristics:

High gain at low bias voltage

Fast rise time

500 µm diameter active area

low capacitance

Parameters:

Package 1a (TO52i) :

active area

0,196 mm²

500 µm

Dark current ¹⁾

max. 5 nA

typ. 0,5 - 1 nA

(M=100)

Total capacitance ¹⁾

(M=100)

typ. 2,5 pF

120 - 190 V

Break down voltage U_BR

(at I_D=2µA)

Temperature coefficient of U_BR

typ. 0,4 %/°C

min. 0,40 A/W

typ. 0,45 A/W

Spectral responsivity

(at 780 nm)

Cut-off frequency

(-3dB)

typ. 1,3 GHz

typ. 280 ps

Rise time

Optimum gain

Gain M

50 - 60

min 200

"Excess Noise" factor

(M=100)

typ. 2,2

typ. 0,2

"Excess Noise" index

(M=100)

Noise current

typ. 1 pA/Hz

(M=100)

N.E.P.

(M=100, 880 nm)

Operating temperature

Storage temperature

typ. 2 * 10^-14W/Hz

-20 ... +70°C

-60 ... +100°C

1) measurement conditions:

Setup of photo current 10nA at M=1 and irradiation by a

NIR-LED (880 nm, 80 nm bandwith).

Rise of the photo current up to 1 µA, (M=100) by internal

multiplication due to an increasing bias voltage.

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