Datasheet > SSO-ADH-1100-TO8P

SSO-ADH-1100-TO8P

更新时间： 2024-10-26 06:14:23

品牌	Logo	应用领域
ROITHNER		光电二极管
页数	文件大小	规格书
2页	193K
描述
APD with Peltier - Cooler

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中文翻译

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数据手册

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SSO-ADH-1100-TO8P 数据手册

SSO-ADH-1100-TO8P

APD with Peltier - Cooler

Special characteristics

The SSO - AD - 1100 - TO8P is a thermoelectrically

cooled APD with chip specially selected for low dark

current and low "dark count rate". Applications include

photon counting and other low light level sensing.

Active area

1,0 mm²

1100 µm ¹⁾

Dark current selection

(M=100)

typ. 5 nA

max. 10 nA

typ. 10 pF

Total capacitance

(M=100)

Break down voltage U_BR

typ. 160 V ²⁾

Temperature coefficient of U_BR

Spectral responsivity at 780 nm

typ. 0,35 %/°C

min. 0,40 A/W

typ. 0,45 A/W

typ. 0,35 GHz

Cut-off frequency

(-3dB)

Rise time

typ. 1 ns ³⁾

40 ... 60

Optimum gain

(conventional AC - mode)

"Excess Noise" factor

(M=40, no cooling

N.E.P.

typ. 2,2

typ. 8 * 10^-14W/Hz

(M=100, 880 nm, no cooling)

Single stage Peltier-cooler

∆T (in ca. 20 sec)

typ. 50 K

min. 45 K

Peltier parameters

I_max= 0,80 A

V_max= 3,87 V

1 mV / K ⁴⁾

Temperature sensor AD - 590

Package standard TO8

with 12 pins

fully hermetic

pin 1

Anode APD

Cathode APD

Peltier-cooler -

Package

pin 3

pin 4

pin 5

pin 6

Peltier-cooler +

V+ T-Sensor

V- T-Sensor

n.c.

pin 8

pin 9

pin 2, 7, 10, 11, 12

Measuring conditions:

1) also available with Chip SSO - AD - 2500

2) Gain = 100, photo current 1 nA (I_p0= 10 nA)

Setup of Break down voltage between

80 V and 350 V is possible during processing

3) 10 - 90 %, Gain = 100, 50 Ω, λ = 810 nm

4) at series resistance of 1 kΩ and bias voltage of 5 V

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