Datasheet > SSO-AD-500NIR-TO52-S1

SSO-AD-500NIR-TO52-S1

更新时间： 2024-10-26 06:14:11

品牌	Logo	应用领域
ROITHNER		光电二极管光电二极管
页数	文件大小	规格书
2页	135K
描述
Avalanche Photodiode NIR

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SSO-AD-500NIR-TO52-S1 数据手册

SSO-AD-500 NIR-TO52-S1

Avalanche Photodiode NIR

Special characteristics:

quantum efficiency >80% at ! 760-910 nm

high speed, low noise

500 µm diameter active area

low slope multiplication curve

Parameters:

Package (TO52 S1) :

active area

0,196 mm²

500 µm

dark current ¹⁾

max. 5 nA

typ. 0,5 - 1 nA

(M=100)

Total capacitance ¹⁾

(M=100)

typ. 1,2 pF

120 - 300 V

Break-down voltage U_BR

(at I_D=2µA)

Temperature coefficient of U_BR

typ. 0,55 %/°C

min. 0,55 A/W

typ. 0,60 A/W

400 MHz

Spectral responsivity

(at 780 nm)

Cut-off frequency

(-3dB)

550 MHz

Rise time

550 ps

300 ps

Optimum gain

Gain M

50 - 60

min 200

"Exess Noise" factor

(M=100)

typ. 2,5

typ. 0,2

"Exess Noise" index

(M=100)

Noise current

(M=100)

typ. 1 pA/Hz

N.E.P.

(M=100, 880 nm)

Operating temperature

Storage temperature

typ. 2 * 10^-14W/Hz

-20 ... +70°C

-60 ... +100°C

1) measurement conditions:

Setup of photo current 10nA at M=1 and irradiation by a

NIR-LED (880 nm, 80 nm bandwith).

Rise of the photo current up to 1 µA, (M=100) by internal

multiplication due to an increasing bias voltage.

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