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SSO-AD-500NIR-TO52-S1 PDF预览

SSO-AD-500NIR-TO52-S1

更新时间: 2024-10-26 06:14:11
品牌 Logo 应用领域
ROITHNER 光电二极管光电二极管
页数 文件大小 规格书
2页 135K
描述
Avalanche Photodiode NIR

SSO-AD-500NIR-TO52-S1 数据手册

 浏览型号SSO-AD-500NIR-TO52-S1的Datasheet PDF文件第2页 
SSO-AD-500 NIR-TO52-S1  
Avalanche Photodiode NIR  
Special characteristics:  
quantum efficiency >80% at ! 760-910 nm  
high speed, low noise  
500 µm diameter active area  
low slope multiplication curve  
Parameters:  
Package (TO52 S1) :  
active area  
0,196 mm2  
500 µm  
dark current 1)  
max. 5 nA  
typ. 0,5 - 1 nA  
(M=100)  
Total capacitance 1)  
(M=100)  
typ. 1,2 pF  
120 - 300 V  
Break-down voltage UBR  
(at ID=2µA)  
Temperature coefficient of UBR  
typ. 0,55 %/°C  
min. 0,55 A/W  
typ. 0,60 A/W  
400 MHz  
Spectral responsivity  
(at 780 nm)  
Cut-off frequency  
(-3dB)  
550 MHz  
Rise time  
550 ps  
300 ps  
Optimum gain  
Gain M  
50 - 60  
min 200  
"Exess Noise" factor  
(M=100)  
typ. 2,5  
typ. 0,2  
"Exess Noise" index  
(M=100)  
Noise current  
(M=100)  
½
typ. 1 pA/Hz  
N.E.P.  
½
(M=100, 880 nm)  
Operating temperature  
Storage temperature  
typ. 2 * 10-14 W/Hz  
-20 ... +70°C  
-60 ... +100°C  
1) measurement conditions:  
Setup of photo current 10nA at M=1 and irradiation by a  
NIR-LED (880 nm, 80 nm bandwith).  
Rise of the photo current up to 1 µA, (M=100) by internal  
multiplication due to an increasing bias voltage.  

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