Datasheet > SSBR20100CTF

SSBR20100CTF

更新时间： 2024-09-14 06:14:03

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新硅能 - SILIKRON		/
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3页	192K
描述
High Junction Temperature

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SSBR20100CTF 数据手册

SSBR20100CT

SSBR20100CTF

Main Product Characteristics:

2×10A

100V

150C

0.8V

VRRM

T(max)

Vf(max)

Features and Benefits:

High Junction Temperature

High ESD Protection, IEC Model ±10Kv

High Forward & Reverse Surge capability

Description:

Schottky Barrier Rectifier designed for high frequency

switch model power supplies such as adaptors and

DC/DC convertors; this product special design for high

forward and reverse surge capability

TO220

SSBR20100CT

TO220F

SSBR20100CTF

Absolute Rating:

Symbol

V_RRM

Characterizes

Peak Repetitive Reverse Voltage

Value

Unit

100

V_R(RMS)

RMS Reverse Voltage

Per diode

Per device

I_F(AV)

Average Forward Current

I_FSM

I_RRM

T_J

Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)

Peak Repetitive Reverse Surge Current(Tp=2us)

Maximum operation Junction Temperature Range

Storage Temperature Range

180

0.5

-50~150

℃

T_stg

Thermal Resistance

Symbol

Characterizes

Maximum Thermal Resistance Junction To

Case

Value

Unit

℃/W

R_θJC

TO220

TO220F

Electrical Characterizes @T_A=25℃ unless otherwise specified

Symbol

V_R

Characterizes

Min Typ Max Unit

Test Condition

I_R=0.5mA

Reverse Breakdown Voltage

100

0.8

0.75

0.1

I_F=10A, T_J=25℃

V_F

I_R

Forward Voltage Drop

Leakage Current

I_F=10A, T_J=125℃

V_R=100V, T_J=25℃

V_R=100V, T_J=125℃

©Silikron Semiconductor CO.,LTD.

2009.5.15

www.silikron.com

Version : 1.0

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